E-LIB Suche - Ergebnisse für: Íñiguez-de-la-Torre, I.

1

Reverse-bias current hysteresis at low temperature in GaN S..:

Orfao, B. ; Abou Daher, M. ; Peña, R. A....
Journal of Applied Physics. 135 (2024) 1 - p. , 2024

2

Reverse Leakage Current Hysteresis in GaN Schottky Barrier ..:

Peña, R. A. ; Orfao, B. ; Íñiguez-de-la-Torre, I....
IEEE Transactions on Electron Devices. 71 (2024) 8 - p. 4524-4529 , 2024

Link: https://doi.org/10.1109/..

3

Guidelines for Overcoming the Practical Limitations for the..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Mateos, J. ; Garcia-Sanchez, S. ; Daher, M. Abou... - p. 1-3 , 2024

Link: https://doi.org/10.1109/..

4

Small-signal equivalent circuit model of GaN-based nanodiod..:

Pérez-Martín, E. ; González, T. ; Iñiguez-de-la-Torre, I..
Journal of Applied Physics. 135 (2024) 4 - p. , 2024

Link: https://doi.org/10.1063/..

5

Low temperature memory effects in AlGaN/GaN nanochannels:

Sánchez-Martín, H. ; Pérez-Martín, E. ; Paz-Martínez, G....
Applied Physics Letters. 123 (2023) 10 - p. , 2023

Link: https://doi.org/10.1063/..

6

Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEM..:

, In: 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC),

Iniguez-de-la-Torre, I. ; Artillan, Philippe ; Paz-Martinez, Gaudencio... - p. 1-3 , 2023

Link: https://doi.org/10.1109/..

7

Characterization of trap-related transient-current effects ..:

, In: 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC),

Sanchez-Martin, H. ; Iniguez-de-la-Torre, I. ; Mateos, J.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

8

Current and voltage responsivity up to 110 GHz in GaN asymm..:

Íñiguez-de-la-Torre, I. ; Pérez-Martín, E. ; Artillan, P....
Applied Physics Letters. 123 (2023) 12 - p. , 2023

Link: https://doi.org/10.1063/..

9

On the Practical Limitations for the Generation of Gunn Osc..:

García-Sánchez, S. ; Daher, M. Abou ; Lesecq, M....
IEEE Transactions on Electron Devices. 70 (2023) 7 - p. 3447-3453 , 2023

Link: https://doi.org/10.1109/..

10

Comparison of GaN and InGaAs high electron mobility transis..:

Paz-Martínez, G. ; Íñiguez-de-la-Torre, I. ; Sánchez-Martín, H....
Journal of Applied Physics. 132 (2022) 13 - p. , 2022

Link: https://doi.org/10.1063/..

11

Monte Carlo analysis of thermal effects in the DC and AC pe..:

Sánchez-Martín, H. ; Íñiguez-de-la-Torre, I. ; García-Sánchez, S...
Solid-State Electronics. 193 (2022) - p. 108289 , 2022

Link: https://doi.org/10.1016/..

12

Optimization of the Epilayer Design for the Fabrication of ..:

Garcia-Sanchez, S. ; Iniguez-de-la-Torre, I. ; Perez, S...
IEEE Transactions on Electron Devices. 69 (2022) 2 - p. 514-520 , 2022

Link: https://doi.org/10.1109/..

13

Non-linear thermal resistance model for the simulation of h..:

García-Sánchez, S ; Íñiguez-de-la-Torre, I ; Pérez, S...
Semiconductor Science and Technology. 36 (2021) 5 - p. 055002 , 2021

Link: https://doi.org/10.1088/..

14

Monte Carlo analysis of the influence of surface charges on..:

Pérez-Martín, E. ; Íñiguez-de-la-Torre, I. ; Gaquière, C...
Journal of Applied Physics. 130 (2021) 10 - p. , 2021

Link: https://doi.org/10.1063/..

15

Analysis of trap states in AlGaN/GaN self-switching diodes ..:

Pérez-Martín, E. ; Vaquero, D. ; Sánchez-Martín, H....
Microelectronics Reliability. 114 (2020) - p. 113806 , 2020

Link: https://doi.org/10.1016/..