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Acosta-Alba, P.
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1

Fabrication and Characterization of Boron-Implanted Silicon..:

Aliane, A. ; Dussopt, L. ; Kerdilès, S....
Journal of Low Temperature Physics.  , 2024
Link: https://doi.org/10.1007/..
 
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2

Estimation of the melting threshold of Ti supersaturated Si..:

Montero, D ; Caudevilla, D ; Algaidy, S...
Semiconductor Science and Technology.  38 (2023)  3 - p. 034002 , 2023
Link: https://doi.org/10.1088/..
 
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3

EZ-FET junctions activation by nanosecond laser annealing:

, In: 2023 21st International Workshop on Junction Technology (IWJT),
Abdou, N. Zerhouni ; Acosta-Alba, P. ; Brunet, L.... - p. 1-4 , 2023
Link: https://doi.org/10.23919..
 
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4

Study of recrystallization and activation processes in thin..:

Chery, N. ; Zhang, M. ; Monflier, R....
Journal of Applied Physics.  131 (2022)  6 - p. , 2022
Link: https://doi.org/10.1063/..
 
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5

A Review of Low Temperature Process Modules Leading Up to t..:

Fenouillet-Beranger, C. ; Brunet, L. ; Batude, P....
IEEE Transactions on Electron Devices.  68 (2021)  7 - p. 3142-3148 , 2021
Link: https://doi.org/10.1109/..
 
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6

Pulsed laser annealing for advanced technology nodes: Model..:

Huet, K. ; Aubin, J. ; Raynal, P.-E....
Applied Surface Science.  505 (2020)  - p. 144470 , 2020
Link: https://doi.org/10.1016/..
 
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7

First demonstration of low temperature $(\leq 500^{\circ}\m..:

, In: 2020 IEEE Symposium on VLSI Technology,
Fenouillet-Beranger, C. ; Brunet, L. ; Batude, P.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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8

28nm FDSOI CMOS technology (FEOL and BEOL) thermal stabilit..:

, In: 2020 IEEE Symposium on VLSI Technology,
Cavalcante, C. ; Fenouillet-Beranzer, C. ; Batude, P.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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9

Impact of UV Nanosecond Laser Annealing on Composition and ..:

Dagault, L. ; Acosta-Alba, P. ; Kerdilès, S....
ECS Journal of Solid State Science and Technology.  8 (2019)  3 - p. P202-P208 , 2019
Link: https://doi.org/10.1149/..
 
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10

Inter-tier Dynamic Coupling and RF Crosstalk in 3D Sequenti..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Sideris, P. ; Lugo-Alvarez, J. ; Batude, P.... - p. 3.4.1-3.4.4 , 2019
Link: https://doi.org/10.1109/..
 
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11

Ex-situ n-type doped carrier-injection layers in direct ban..:

Casiez, L. ; Cardoux, C. ; Acosta Alba, P....
Materials Science in Semiconductor Processing.  182 (2024)  - p. 108654 , 2024
Link: https://doi.org/10.1016/..
 
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12

Low Temperature Junction Formation for EZ-FET:

Zerhouni Abdou, N. ; Acosta Alba, P. ; Brunet, L....
IEEE Journal of the Electron Devices Society.  12 (2024)  - p. 384-389 , 2024
Link: https://doi.org/10.1109/..
 
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13

Methodology for parameters extraction with undoped junction..:

Zerhouni Abdou, N. ; Reboh, S. ; Brunet, L....
Solid-State Electronics.  217 (2024)  - p. 108897 , 2024
Link: https://doi.org/10.1016/..
 
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14

Nanosecond laser annealing of pseudomorphic GeSn layers: Im..:

Frauenrath, M. ; Acosta Alba, P. ; Concepción, O....
Materials Science in Semiconductor Processing.  163 (2023)  - p. 107549 , 2023
Link: https://doi.org/10.1016/..
 
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15

Undoped junctionless EZ-FET: Model and measurements:

Zerhouni Abdou, N. ; Reboh, S. ; Alepidis, M....
Solid-State Electronics.  208 (2023)  - p. 108731 , 2023
Link: https://doi.org/10.1016/..
 
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