E-LIB Suche - Ergebnisse für: Agnello, P.

1

Impact of gluten-friendly™ technology on wheat kernel endos..:

Landriscina, L. ; D'Agnello, P. ; Bevilacqua, A....
Food Chemistry. 221 (2017) - p. 1258-1268 , 2017

Link: https://doi.org/10.1016/..

2

Stress dependence and poly-pitch scaling characteristics of..:

, In: 2007 IEEE Symposium on VLSI Technology,

Yang, B. ; Nummy, K. ; Waite, A.... - p. None , 2007

Link: https://doi.org/10.1109/..

3

High Performance 45-nm SOI Technology with Enhanced Strain,..:

, In: 2006 International Electron Devices Meeting,

Agnello, P. ; Ivers, T. ; Warm, C.... - p. None , 2006

Link: https://doi.org/10.1109/..

4

High performance CMOS devices on SOI for 90 nm technology e..:

, In: IEEE International Electron Devices Meeting 2003,

Park, H. ; Clark, W. ; Mocuta, A.C.... - p. 27.4.1-27.4.4 , 2003

Link: https://doi.org/10.1109/..

5

Titanium silicide/germanide formation on submicron features..:

Agnello, P. D. ; Kesan, V. P. ; Tejwani, M..
Journal of Electronic Materials. 23 (1994) 4 - p. 413-421 , 1994

Link: https://doi.org/10.1007/..

6

Fabrication of high performance 512Kb SRAMs in 0.25 μm CMOS..:

Viswanathan, R. ; Seeger, D. ; Bright, A....
Microelectronic Engineering. 23 (1994) 1-4 - p. 247-252 , 1994

Link: https://doi.org/10.1016/..

7

Improved control of momentary rapid thermal annnealing for ..:

Agnello, P. D. ; Fink, A.
Journal of Electronic Materials. 22 (1993) 6 - p. 661-665 , 1993

Link: https://doi.org/10.1007/..

8

Growth Rate Enhancement of Heavy n‐ and p‐Type Doped Silico..:

Agnello, P. D. ; Sedgwick, T. O. ; Cotte, J.
Journal of The Electrochemical Society. 140 (1993) 9 - p. 2703-2709 , 1993

Link: https://doi.org/10.1149/..

9

Effects of Trace Surface Oxidation in Low Temperature Epita..:

Sedgwick, T. O. ; Agnello, P. D. ; Grützmacher, D. A.
Journal of The Electrochemical Society. 140 (1993) 12 - p. 3684-3688 , 1993

Link: https://doi.org/10.1149/..

10

Inhibition of Silicon Oxidation during Low Temperature Epit..:

Agnello, P. D. ; Sedgwick, T. O.
Journal of The Electrochemical Society. 139 (1992) 4 - p. 1140-1146 , 1992

Link: https://doi.org/10.1149/..

11

Use of electron-beam charging for in-process inspection of ..:

Jenkins, K. A. ; Agnello, P. D. ; Bright, A. A.
Applied Physics Letters. 61 (1992) 3 - p. 312-314 , 1992

Link: https://doi.org/10.1063/..

12

Analysis of silicide process defects by non-contact electro..:

, In: 30th Annual Proceedings Reliability Physics 1992,

Jenkins, K.A. ; Agnello, P.D. ; Bucelot, T.J. - p. 304,305,306,307,308 , 1992

Link: https://doi.org/10.1109/..

13

Conditions for an Oxide‐Free Si Surface for Low‐Temperature..:

Agnello, P. D. ; Sedgwick, T. O.
Journal of The Electrochemical Society. 139 (1992) 10 - p. 2929-2934 , 1992

Link: https://doi.org/10.1149/..

14

Silicon epitaxy from silane by atmospheric-pressure chemica..:

Agnello, P. D. ; Sedgwick, T. O. ; Bretz, K. C..
Applied Physics Letters. 61 (1992) 11 - p. 1298-1300 , 1992

Link: https://doi.org/10.1063/..

15

Heavy arsenic doping of silicon grown by atmospheric-pressu..:

Agnello, P. D. ; Sedgwick, T. O. ; Goorsky, M. S..
Applied Physics Letters. 60 (1992) 4 - p. 454-456 , 1992

Link: https://doi.org/10.1063/..