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Aitkhozhin, �. S.
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1

Epitaxial growth of GaAs thin layers on NiSb substrates:

Aitkhozhin, S. A. ; Artemov, A. S. ; Belousov, P. S....
Inorganic Materials.  51 (2015)  2 - p. 83-87 , 2015
Link: https://doi.org/10.1134/..
 
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2

Bridgman Growth of NiSb Single Crystals:

Ogarev, D. A. ; Aitkhozhin, S. A. ; Temirov, Yu. Sh....
Inorganic Materials.  41 (2005)  11 - p. 1162-1165 , 2005
Link: https://doi.org/10.1007/..
 
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3

General orientational characteristics of heteroepitaxial la..:

Kuznetsov, G. F. ; Aitkhozhin, S. A.
Crystallography Reports.  47 (2002)  3 - p. 514-518 , 2002
Link: https://doi.org/10.1134/..
 
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4

Influence of impurities and grain size on the creep of poly..:

Aitkhozhin, �. S. ; Aristov, P. A. ; Ibragimov, Sh. Sh..
Soviet Atomic Energy.  70 (1991)  2 - p. 139-141 , 1991
Link: https://doi.org/10.1007/..
 
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5

A high-sensitivity receiver of submillimeter radiation base..:

Afinogenov, V. M. ; Aitkhozhin, S. A. ; Strakhov, V. A...
Radiophysics and Quantum Electronics.  15 (1972)  10 - p. 1207-1212 , 1972
Link: https://doi.org/10.1007/..
 
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6

Radiation-induced creep of copper, aluminium and their allo..:

Aitkhozhin, E.S. ; Chumakov, E.V.
Journal of Nuclear Materials.  233-237 (1996)  - p. 537-541 , 1996
Link: https://doi.org/10.1016/..
 
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7

Temperature dependence of the in-reactor creep of copper an..:

Aitkhozhin, É. S. ; Ibragimov, Sh. Sh. ; Chumakov, E. V.
Soviet Atomic Energy.  69 (1990)  3 - p. 719-723 , 1990
Link: https://doi.org/10.1007/..
 
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