Alivov, Ya. I.
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1

n-Al0.15Ga0.85N/p-6H–SiC heterostructure and based bipolar ..:

Alivov, Ya.I. ; Fan, Q. ; Ni, X....
Microelectronics Reliability.  50 (2010)  12 - p. 2090-2092 , 2010
 
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2

Properties of isotype n-ZnO/n-GaN heterostructures studied ..:

Alivov, Ya I ; Xiao, B ; Akarca-Biyikli, S...
Journal of Physics: Condensed Matter.  20 (2008)  8 - p. 085201 , 2008
 
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A comprehensive review of ZnO materials and devices:

Özgür, Ü. ; Alivov, Ya. I. ; Liu, C....
Journal of Applied Physics.  98 (2005)  4 - p. , 2005
 
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8

Electrical and Optical Properties of n-ZnO/p-SiC Heterojunc..:

Alivov, Ya. I. ; Johnstone, D. ; Özgür, Ü....
Japanese Journal of Applied Physics.  44 (2005)  10R - p. 7281 , 2005
 
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9

High efficiency n-ZnO/p-SiC heterostructure photodiodes gro..:

Alivov, Ya.I. ; Özgür, Ü. ; Doğan, S....
Superlattices and Microstructures.  38 (2005)  4-6 - p. 439-445 , 2005
 
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11

Forward-current electroluminescence from GaN/ZnO double het..:

Alivov, Ya.I. ; Özgür, Ü. ; Dogˇan, S....
Solid-State Electronics.  49 (2005)  10 - p. 1693-1696 , 2005
 
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12

Heteroepitaxial ZnO/6H-SiC structures fabricated by chemica..:

Ataev, B.M. ; Alivov, Ya.I. ; Kalinina, E.V....
Journal of Crystal Growth.  275 (2005)  1-2 - p. e2471-e2474 , 2005
 
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