Ambrosi, Elia
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1

Forming-Free Selectors Based on Te in an Insulating SiO x M..:

Datye, Isha M. ; Vaziri, Sam ; Ambrosi, Elia...
IEEE Transactions on Electron Devices.  71 (2024)  1 - p. 530-535 , 2024
 
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2

Ultrafast ~7 Mbps True Random Number Generator Based on SNG..:

Guy, Jeremy ; Ambrosi, Elia ; Wu, Cheng-Hsien.
IEEE Transactions on Electron Devices.  71 (2024)  4 - p. 2794-2800 , 2024
 
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3

Chalcogenide Selectors for Low Voltage and High Density Mem..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
 
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4

Reliable Low Voltage Selector Device Technology Based on Ro..:

Ambrosi, Elia ; Wu, Cheng-Hsien ; Lee, Heng-Yuan...
IEEE Electron Device Letters.  43 (2022)  10 - p. 1673-1676 , 2022
 
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5

Switching Dynamics of Ag-Based Filamentary Volatile Resisti..:

Covi, Erika ; Wang, Wei ; Lin, Yu-Hsuan...
IEEE Transactions on Electron Devices.  68 (2021)  9 - p. 4335-4341 , 2021
 
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6

Switching Dynamics of Ag-Based Filamentary Volatile Resisti..:

Wang, Wei ; Covi, Erika ; Lin, Yu-Hsuan...
IEEE Transactions on Electron Devices.  68 (2021)  9 - p. 4342-4349 , 2021
 
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8

In-memory PageRank using a Crosspoint Array of Resistive Sw..:

, In: 2020 2nd IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS),
Sun, Zhong ; Pedretti, Giacomo ; Ambrosi, Elia.. - p. 26-30 , 2020
 
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9

In-Memory PageRank Accelerator With a Cross-Point Array of ..:

Sun, Zhong ; Ambrosi, Elia ; Pedretti, Giacomo..
IEEE Transactions on Electron Devices.  67 (2020)  4 - p. 1466-1470 , 2020
 
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10

Time Complexity of In-Memory Solution of Linear Systems:

Sun, Zhong ; Pedretti, Giacomo ; Mannocci, Piergiulio...
IEEE Transactions on Electron Devices.  67 (2020)  7 - p. 2945-2951 , 2020
 
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11

Volatile Resistive Switching Memory Based on Ag Ion Drift/D..:

Wang, Wei ; Laudato, Mario ; Ambrosi, Elia...
IEEE Transactions on Electron Devices.  66 (2019)  9 - p. 3795-3801 , 2019
 
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12

Solving matrix equations in one step with cross-point resis..:

Sun, Zhong ; Pedretti, Giacomo ; Ambrosi, Elia...
Proceedings of the National Academy of Sciences of the United States of America.  116 (2019)  10 - p. 4123-4128 , 2019
 
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15

Modeling of switching speed and retention time in volatile ..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Wang, Wei ; Covi, Erika ; Lin, Yu-Hsuan.. - p. 32.3.1-32.3.4 , 2019
 
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