E-LIB Suche - Ergebnisse für: Anil, K.G

1

Implications of fin width scaling on variability and reliab..:

Chabukswar, S. ; Maji, D. ; Manoj, C.R....
Microelectronic Engineering. 87 (2010) 10 - p. 1963-1967 , 2010

2

Parameter extraction for PSP MOSFET model using hierarchica..:

Thakker, R.A. ; Patil, M.B. ; Anil, K.G.
Engineering Applications of Artificial Intelligence. 22 (2009) 2 - p. 317-328 , 2009

Link: https://doi.org/10.1016/..

3

Parameter extraction for mos model 11 using Particle Swarm ..:

, In: 2007 International Workshop on Physics of Semiconductor Devices,

Chopde, A. M. ; Khandelwal, S. ; Thakker, R. A... - p. None , 2007

Link: https://doi.org/10.1109/..

4

Parameter extraction for PSP MOSFET model using particle sw..:

, In: 2007 International Workshop on Physics of Semiconductor Devices,

Thakker, R. A. ; Gandhi, Nikunj ; Patil, M. B.. - p. None , 2007

Link: https://doi.org/10.1109/..

5

Phase effects and short gate length device implementation o..:

Kittl, J.A. ; Pawlak, M.A. ; Lauwers, A....
Microelectronic Engineering. 83 (2006) 11-12 - p. 2117-2121 , 2006

Link: https://doi.org/10.1016/..

6

Minimization of MuGFET source/drain resistance using wrap-a..:

Dixit, A. ; Anil, K.G. ; Collaert, N....
Solid-State Electronics. 50 (2006) 7-8 - p. 1466-1471 , 2006

Link: https://doi.org/10.1016/..

7

Minimization of specific contact resistance in multiple gat..:

Dixit, A. ; Anil, K.G. ; Rooyackers, R....
Solid-State Electronics. 50 (2006) 4 - p. 587-593 , 2006

Link: https://doi.org/10.1016/..

8

Ni fully silicided gates for 45nm CMOS applications:

Kittl, Jorge A. ; Lauwers, Anne ; Pawlak, Malgorzata A....
Microelectronic Engineering. 82 (2005) 3-4 - p. 441-448 , 2005

Link: https://doi.org/10.1016/..

9

Shift and ratio method revisited: extraction of the fin wid..:

Collaert, N. ; Dixit, A. ; Anil, K.G....
Solid-State Electronics. 49 (2005) 5 - p. 763-768 , 2005

Link: https://doi.org/10.1016/..

10

Silicides for advanced CMOS devices:

, In: Springer Proceedings in Physics; Microscopy of Semiconducting Materials,

Lauwers, A ; Kittl, J A ; van Dal, M J H... - p. 379-388 , 2005

Link: https://doi.org/10.1007/..

11

A detailed experimental investigation of impact ionization ..:

Anil, K.G. ; Mahapatra, S. ; Eisele, I.
Solid-State Electronics. 47 (2003) 6 - p. 995-1001 , 2003

Link: https://doi.org/10.1016/..

12

Enhancement of device performance in vertical sub-100 nm MO..:

Fink, C. ; Anil, K.G. ; Geiger, H....
Solid-State Electronics. 46 (2002) 3 - p. 387-391 , 2002

Link: https://doi.org/10.1016/..

13

Observation of double peak in the substrate current versus ..:

Anil, K. G. ; Eisele, I. ; Mahapatra, S.
Applied Physics Letters. 78 (2001) 15 - p. 2238-2240 , 2001

Link: https://doi.org/10.1063/..

14

MBE-grown vertical power-MOSFETs with 100-nm channel length:

Fink, C ; Anil, K.G ; Hansch, W...
Thin Solid Films. 380 (2000) 1-2 - p. 207-210 , 2000

Link: https://doi.org/10.1016/..

15

Optimization of breakdown behaviour and short channel effec..:

Fink, C ; Anil, K.G ; Geiger, H...
Thin Solid Films. 369 (2000) 1-2 - p. 383-386 , 2000

Link: https://doi.org/10.1016/..