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Antoszewski, J.
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1

Electronic Transport in InAs/GaSb Nanostructured Type-II Su..:

, In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC),
Umana-Membreno, G.A. ; Muller, R. ; Niemasz, J.... - p. 162-163 , 2023
Link: https://doi.org/10.1109/..
 
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2

Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs ..:

Pan, W. W. ; Gu, R. J. ; Zhang, Z. K....
Journal of Electronic Materials.  51 (2022)  9 - p. 4869-4883 , 2022
Link: https://doi.org/10.1007/..
 
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3

Design Principles for High QE HgCdTe Infrared Photodetector..:

Akhavan, N. D. ; Umana-Membreno, G. A. ; Gu, R...
Journal of Electronic Materials.  51 (2022)  9 - p. 4742-4751 , 2022
Link: https://doi.org/10.1007/..
 
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4

Inversion layer electron mobility distribution in fully-dep..:

Umana-Membreno, G.A. ; Akhavan, N.D. ; Antoszewski, J...
Solid-State Electronics.  183 (2021)  - p. 108074 , 2021
Link: https://doi.org/10.1016/..
 
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5

Interdiffusion Effects on Bandstructure in HgTe-CdTe Superl..:

Akhavan, N. D. ; Umana-Membreno, G. A. ; Gu, R...
Journal of Electronic Materials.  48 (2019)  10 - p. 6159-6168 , 2019
Link: https://doi.org/10.1007/..
 
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6

MBE-growth of CdTe on GaSb substrates: A case study on the ..:

Madni, I. ; Lei, W. ; Ren, Y.L...
Materials Chemistry and Physics.  214 (2018)  - p. 285-290 , 2018
Link: https://doi.org/10.1016/..
 
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7

Electronic transport parameters of indium zinc oxide thin f..:

Umana-Membreno, G.A. ; Song, Y. ; Akhavan, N.D....
Microelectronic Engineering.  178 (2017)  - p. 164-167 , 2017
Link: https://doi.org/10.1016/..
 
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8

MBE growth of HgCdTe on GaSb substrates for application in ..:

Gu, R. ; Antoszewski, J. ; Lei, W....
Journal of Crystal Growth.  468 (2017)  - p. 216-219 , 2017
Link: https://doi.org/10.1016/..
 
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9

nBn HgCdTe infrared detector with HgTe(HgCdTe)/CdTe SLs bar..:

Benyahia, D. ; Martyniuk, P. ; Kopytko, M....
Optical and Quantum Electronics.  48 (2016)  3 - p. , 2016
Link: https://doi.org/10.1007/..
 
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10

Hole Transport in Arsenic-Doped Hg1−x CdxTe with x ≥ 0.5:

Umana-Membreno, G. A. ; Kala, H. ; Bains, S....
Journal of Electronic Materials.  45 (2016)  9 - p. 4686-4691 , 2016
Link: https://doi.org/10.1007/..
 
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11

Investigation of Substrate Effects on Interface Strain and ..:

Gu, R. ; Lei, W. ; Antoszewski, J..
Journal of Electronic Materials.  45 (2016)  9 - p. 4596-4602 , 2016
Link: https://doi.org/10.1007/..
 
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12

MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alter..:

Lei, W. ; Gu, R. J. ; Antoszewski, J....
Journal of Electronic Materials.  44 (2015)  9 - p. 3180-3187 , 2015
Link: https://doi.org/10.1007/..
 
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13

Hall-effect characterization of electron transport at SiO2/..:

Umana-Membreno, G.A. ; Dhar, S. ; Choudhary, A....
Microelectronic Engineering.  147 (2015)  - p. 137-140 , 2015
Link: https://doi.org/10.1016/..
 
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14

Investigation of ICPECVD Silicon Nitride Films for HgCdTe S..:

Zhang, J. ; Umana-Membreno, G.A. ; Gu, R....
Journal of Electronic Materials.  44 (2015)  9 - p. 2990-3001 , 2015
Link: https://doi.org/10.1007/..
 
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15

High-resolution mobility spectrum analysis of magnetoresist..:

Umana-Membreno, G.A. ; Chang, S.-J. ; Bawedin, M....
Solid-State Electronics.  113 (2015)  - p. 109-115 , 2015
Link: https://doi.org/10.1016/..
 
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