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Anzalone, R.
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1

Advanced approach of bulk (111) 3C-SiC epitaxial growth:

Calabretta, C. ; Scuderi, V. ; Bongiorno, C....
Microelectronic Engineering.  283 (2024)  - p. 112116 , 2024
Link: https://doi.org/10.1016/..
 
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2

Assessing innovative bulk (111) 3C-SiC epitaxial growth:

, In: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE),
Calabretta, C. ; Scuderi, V. ; Bongiorno, C.... - p. 1-5 , 2024
Link: https://doi.org/10.1109/..
 
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3

Micro-Raman evaluation of 200 mm SiC material:

Piluso, N. ; Carria, E. ; Anzalone, R..
Microelectronic Engineering.  273 (2023)  - p. 111962 , 2023
Link: https://doi.org/10.1016/..
 
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4

From thin film to bulk 3C-SiC growth: Understanding the mec..:

La Via, F. ; Severino, A. ; Anzalone, R....
Materials Science in Semiconductor Processing.  78 (2018)  - p. 57-68 , 2018
Link: https://doi.org/10.1016/..
 
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5

Carbonization and transition layer effects on 3C-SiC film r..:

Anzalone, R. ; Litrico, G. ; Piluso, N....
Journal of Crystal Growth.  473 (2017)  - p. 11-19 , 2017
Link: https://doi.org/10.1016/..
 
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6

High growth rate 3C-SiC growth: from hetero-epitaxy to homo..:

La Via, F. ; Litrico, G. ; Anzalone, R....
MRS Advances.  1 (2016)  54 - p. 3643-3647 , 2016
Link: https://doi.org/10.1557/..
 
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7

Hydrogen etching influence on 4H-SiC homo-epitaxial layer f..:

, In: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM),
Anzalone, R. ; Piluso, N. ; Salanitri, M.... - p. 1-1 , 2016
Link: https://doi.org/10.4028/..
 
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8

Interface state density evaluation of high quality hetero-e..:

Anzalone, R. ; Privitera, S. ; Camarda, M....
Materials Science and Engineering: B.  198 (2015)  - p. 14-19 , 2015
Link: https://doi.org/10.1016/..
 
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9

Evaluation of 3C-SiC/Si residual stress and curvatures alon..:

Anzalone, R. ; Alberti, A. ; La Via, F.
Materials Letters.  118 (2014)  - p. 130-133 , 2014
Link: https://doi.org/10.1016/..
 
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10

A new position sensitive anode for plasmas diagnostic:

Grasso, R. ; Tudisco, S. ; Anzalone, A....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.  720 (2013)  - p. 122-124 , 2013
Link: https://doi.org/10.1016/..
 
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11

Very low dose ion‐implantation effect on heteroepitaxial 3C..:

Anzalone, R. ; Piluso, N. ; Marino, A...
physica status solidi (a).  209 (2012)  11 - p. 2235-2240 , 2012
Link: https://doi.org/10.1002/..
 
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12

Micro-Raman Analysis of a Micromachined 3C-SiC Cantilever:

Piluso, Nicolò ; Anzalone, R. ; Camarda, Massimo...
Materials Science Forum.  717-720 (2012)  - p. 525-528 , 2012
Link: https://doi.org/10.4028/..
 
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13

Micro‐Raman analysis and finite‐element modeling of 3 C‐SiC..:

Piluso, N. ; Anzalone, R. ; Camarda, M....
Journal of Raman Spectroscopy.  44 (2012)  2 - p. 299-306 , 2012
Link: https://doi.org/10.1002/..
 
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14

Stress fields analysis in 3C–SiC free-standing microstructu..:

Piluso, N. ; Anzalone, R. ; Camarda, M....
Thin Solid Films.  522 (2012)  - p. 20-22 , 2012
Link: https://doi.org/10.1016/..
 
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15

Wafer Cut Effect on Hetero-Epitaxial 3C-SiC Film for MEMS A..:

Anzalone, R. ; Camarda, M. ; Auditore, A....
Electrochemical and Solid-State Letters.  15 (2012)  6 - p. H182 , 2012
Link: https://doi.org/10.1149/..
 
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