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Ardaravicˇius, L.
27
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Online (27)
Mediatypes
Articles (Online) (21)
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1
Detailed look into the unstable S-N border during propagati..:
Ardaravičius, L
;
Kiprijanovič, O
Physica Scripta. 98 (2023) 5 - p. 055924 , 2023
Link:
https://doi.org/10.1088/..
?
2
Descriptive model of the transition from superconducting to..:
Kiprijanovič, O.
;
Ardaravičius, L.
Thin Solid Films. 748 (2022) - p. 139159 , 2022
Link:
https://doi.org/10.1016/..
?
3
S-N border instability, magnetic flux trapping and cumulati..:
Kiprijanovič, O
;
Ardaravičius, L
;
Gradauskas, J
...
Superconductor Science and Technology. 33 (2020) 9 - p. 095013 , 2020
Link:
https://doi.org/10.1088/..
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4
Electron drift velocity in wurtzite ZnO at high electric fi..:
Ardaravičius, L.
;
Kiprijanovič, O.
;
Ramonas, M.
...
Journal of Applied Physics. 126 (2019) 18 - p. , 2019
Link:
https://doi.org/10.1063/..
?
5
Threshold field for soft damage and electron drift velocity..:
Ardaravičius, L
;
Kiprijanovič, O
;
Liberis, J
...
Semiconductor Science and Technology. 30 (2015) 10 - p. 105016 , 2015
Link:
https://doi.org/10.1088/..
?
6
High frequency noise of epitaxial graphene grown on sapphir:
Ardaravicˇius, L.
;
Liberis, J.
;
Šermukšnis, E.
...
physica status solidi (RRL) – Rapid Research Letters. 7 (2013) 5 - p. 348-351 , 2013
Link:
https://doi.org/10.1002/..
?
7
Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelbac..:
Ardaravičius, L
;
Kiprijanovič, O
;
Liberis, J
...
Semiconductor Science and Technology. 27 (2012) 12 - p. 122001 , 2012
Link:
https://doi.org/10.1088/..
?
8
Window for better reliability of nitride heterostructure fi..:
Matulionis, A.
;
Liberis, J.
;
Šermukšnis, E.
...
Microelectronics Reliability. 52 (2012) 9-10 - p. 2149-2152 , 2012
Link:
https://doi.org/10.1016/..
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9
Hot‐electron drift velocity and hot‐phonon decay in AlInN/A..:
Ardaravicˇius, L.
;
Liberis, J.
;
Kiprijanovicˇ, O.
...
physica status solidi (RRL) – Rapid Research Letters. 5 (2010) 2 - p. 65-67 , 2010
Link:
https://doi.org/10.1002/..
?
10
Electron drift velocity in lattice-matched AlInN/AlN/GaN ch..:
Ardaravičius, L.
;
Ramonas, M.
;
Liberis, J.
...
Journal of Applied Physics. 106 (2009) 7 - p. , 2009
Link:
https://doi.org/10.1063/..
?
11
Hot-electron transport in 4H–SiC:
Ardaravičius, L.
;
Matulionis, A.
;
Kiprijanovic, O.
...
Applied Physics Letters. 86 (2005) 2 - p. , 2005
Link:
https://doi.org/10.1063/..
?
12
Comparative analysis of hot‐electron transport in AlGaN/GaN..:
Ardaravičius, L.
;
Ramonas, M.
;
Kiprijanovic, O.
...
physica status solidi (a). 202 (2005) 5 - p. 808-811 , 2005
Link:
https://doi.org/10.1002/..
?
13
Influence of low-field-mobility-related issues on SiC metal..:
Cha, Ho-Young
;
Choi, Y. C.
;
Eastman, L. F.
...
Journal of Electronic Materials. 34 (2005) 4 - p. 330-335 , 2005
Link:
https://doi.org/10.1007/..
?
14
Electron drift velocity in AlGaN/GaN channel at high electr..:
Ardaravičius, L.
;
Matulionis, A.
;
Liberis, J.
...
Applied Physics Letters. 83 (2003) 19 - p. 4038-4040 , 2003
Link:
https://doi.org/10.1063/..
?
15
Hot-electron energy relaxation time in AlGaN/GaN:
Matulionis, A
;
Liberis, J
;
Ardaravicius, L
...
Semiconductor Science and Technology. 17 (2002) 3 - p. L9-L14 , 2002
Link:
https://doi.org/10.1088/..
1-15