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Arteev, D. S.
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1

Temperature-dependent luminescent properties of dual-wavele..:

Arteev, D.S. ; Sakharov, A.V. ; Nikolaev, A.E...
Journal of Luminescence.  234 (2021)  - p. 117957 , 2021
Link: https://doi.org/10.1016/..
 
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2

InAlN/GaN and AlGaN/GaN HEMT technologies comparison for mi..:

Velikovskiy, L E ; Sim, P E ; Demchenko, O I...
IOP Conference Series: Materials Science and Engineering.  1019 (2021)  1 - p. 012071 , 2021
Link: https://doi.org/10.1088/..
 
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3

Influence of AlN/GaN interfacial non-idealities on the prop..:

Arteev, D S ; Sakharov, A V ; Lundin, W V..
Journal of Physics: Conference Series.  2103 (2021)  1 - p. 012202 , 2021
Link: https://doi.org/10.1088/..
 
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4

Determination of hole diffusion length in n-GaN:

Arteev, D S ; Sakharov, A V ; Nikolaev, A E...
Journal of Physics: Conference Series.  2086 (2021)  1 - p. 012075 , 2021
Link: https://doi.org/10.1088/..
 
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5

2D electrons and 2D plasmons in AlGaN/GaN nanostructure und..:

Loginov, L A ; Shalygin, V A ; Moldavskaya, M D...
Journal of Physics: Conference Series.  1482 (2020)  1 - p. 012022 , 2020
Link: https://doi.org/10.1088/..
 
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6

Influence of doping profile of GaN:Fe buffer layer on the p..:

Arteev, D S ; Sakharov, A V ; Lundin, W V...
Journal of Physics: Conference Series.  1697 (2020)  1 - p. 012206 , 2020
Link: https://doi.org/10.1088/..
 
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7

Emission spectrum control in monolithic blue-cyan dichromat..:

Arteev, D S ; Karpov, S Y ; Sakharov, A V...
Semiconductor Science and Technology.  35 (2020)  4 - p. 045017 , 2020
Link: https://doi.org/10.1088/..
 
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8

III-N heterostructures for monolithic integration of enhanc..:

Arteev, D S ; Sakharov, A V ; Nikolaev, A E..
Journal of Physics: Conference Series.  1482 (2020)  1 - p. 012031 , 2020
Link: https://doi.org/10.1088/..
 
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9

Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAl..:

Arteev, D S ; Sakharov, A V ; Lundin, W V...
Journal of Physics: Conference Series.  1400 (2019)  7 - p. 077009 , 2019
Link: https://doi.org/10.1088/..
 
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10

Implementation of an artificial neural network to predict p..:

Arteev, D S ; Sakharov, A V ; Lundin, W V..
Journal of Physics: Conference Series.  1199 (2019)  - p. 012007 , 2019
Link: https://doi.org/10.1088/..
 
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11

Selective terahertz emission due to electrically excited 2D..:

Shalygin, V. A. ; Moldavskaya, M. D. ; Vinnichenko, M. Ya....
Journal of Applied Physics.  126 (2019)  18 - p. , 2019
Link: https://doi.org/10.1063/..
 
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12

Luminescence Line Broadening Caused by Alloy Disorder in In..:

Arteev, D. S. ; Sakharov, A. V. ; Lundin, W. V....
Semiconductors.  53 (2019)  14 - p. 1900-1903 , 2019
Link: https://doi.org/10.1134/..
 
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13

Terahertz Emission due to Radiative Decay of Hot 2D Plasmon..:

, In: 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz),
Shalygin, V. A. ; Arteev, D. S. ; Lundin, W. V.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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14

Two-dimensional plasmons in a GaN/AlGaN heterojunction:

Vinnichenko, M Ya ; Shalygin, V A ; Moldavskaya, M D...
Journal of Physics: Conference Series.  1199 (2019)  - p. 012014 , 2019
Link: https://doi.org/10.1088/..
 
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15

Investigation of Statistical Broadening in InGaN Alloys:

Arteev, D S ; Sakharov, A V ; Zavarin, E E...
Journal of Physics: Conference Series.  1135 (2018)  - p. 012050 , 2018
Link: https://doi.org/10.1088/..
 
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