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Asahi, Hajime
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1

Photoluminescence enhancement associated with the small siz..:

Almokhtar, Mohamed ; All, Naglaa Abdel ; Almarashi, Jamal Q.M..
Journal of Alloys and Compounds.  894 (2022)  - p. 162408 , 2022
Link: https://doi.org/10.1016/..
 
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2

III-Nitride Dilute Magnetic Semiconductors:

, In: Molecular Beam Epitaxy,
Zhou, Yi-Kai ; Asahi, Hajime - p. 299-313 , 2019
Link: https://doi.org/10.1002/..
 
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3

Molecular beam epitaxy: materials and applications for elec..:

Asahi, Hajime ; Horikoshi, Yoshiji - First edition . , 2019
Link: https://learning.oreilly..
 
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4

Molecular beam epitaxy: materials and applications for elec.. 

Wiley series in materials for electronic and optoelectronic applications
Asahi, Hajime ; Horikoshi, Yoshiji - First edition . , 2019
Link: https://onlinelibrary.wi..
 
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5

Isotopic Heft on the B1l Silent Mode in Ultra-Narrow Galliu..:

Rodríguez-Fernández, Carlos ; Almokhtar, Mohammed ; Ibarra-Hernández, Wilfredo...
Nano Letters.  18 (2018)  8 - p. 5091-5097 , 2018
Link: https://doi.org/10.1021/..
 
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6

Photoluminescence related to Gd3+:N-vacancy complex in GaN:..:

Almokhtar, Mohamed ; Emura, Shuichi ; Koide, Akihiro..
Journal of Alloys and Compounds.  628 (2015)  - p. 401-406 , 2015
Link: https://doi.org/10.1016/..
 
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7

Molecular Beam Epitaxy with Gaseous Sources:

, In: Handbook of Crystal Growth,
Asahi, Hajime - p. 193-224 , 2015
Link: https://doi.org/10.1016/..
 
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8

List of Contributors:

, In: Handbook of Crystal Growth,
Amano, Hiroshi ; André, Yamina ; Asahi, Hajime... - p. xiii-xvii , 2015
Link: https://doi.org/10.1016/..
 
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9

Effects of growth temperature on nitrogen incorporation int..:

Kim, Kang Min ; Hasegawa, Shigehiko ; Asahi, Hajime.
Ceramics International.  40 (2014)  1 - p. 1235-1239 , 2014
Link: https://doi.org/10.1016/..
 
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10

Structure Analysis of Composition Modulation in Epitaxially..:

Ishimaru, Manabu ; Hasegawa, Shigehiko ; Asahi, Hajime..
Japanese Journal of Applied Physics.  52 (2013)  11R - p. 110120 , 2013
Link: https://doi.org/10.7567/..
 
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11

Study on nitrogen-induced defects formation and annealing e..:

Kim, Kang Min ; Kim, Woo-Byoung ; Krishnamurthy, Daivasigamani...
Journal of Crystal Growth.  368 (2013)  - p. 35-38 , 2013
Link: https://doi.org/10.1016/..
 
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12

Growth and Characterization of GaN Nanostructures toward El..:

Hasegawa, Shigehiko ; Seo, Jong Uk ; Uenaka, Mai..
Japanese Journal of Applied Physics.  52 (2013)  11R - p. 110103 , 2013
Link: https://doi.org/10.7567/..
 
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13

Optical properties of InGaPN epilayer with low nitrogen con..:

Min Kim, Kang ; Nonoguchi, Shogo ; Krishnamurthy, Daivasigamani...
Journal of Applied Physics.  112 (2012)  6 - p. , 2012
Link: https://doi.org/10.1063/..
 
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14

Strong atomic ordering in Gd-doped GaN:

Ishimaru, Manabu ; Higashi, Kotaro ; Hasegawa, Shigehiko...
Applied Physics Letters.  101 (2012)  10 - p. , 2012
Link: https://doi.org/10.1063/..
 
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15

Observation of large Zeeman splitting in GaGdN/AlGaN ferrom..:

Zhou, YiKai ; Almokhtar, Mohamed ; Kubo, Hitoshi...
Solid State Communications.  152 (2012)  14 - p. 1270-1273 , 2012
Link: https://doi.org/10.1016/..
 
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