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Asamizu, Hirokuni
23  results:
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1

Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face ..:

Kushibe, Mitsuhiro ; Nishio, Johji ; Iijima, Ryosuke...
Materials Science Forum.  924 (2018)  - p. 432-435 , 2018
Link: https://doi.org/10.4028/..
 
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2

Investigation of Low Off-Angled 4H-SiC Epitaxial Wafers for..:

Kojima, Kazutoshi ; Masumoto, Keiko ; Asamizu, Hirokuni..
ECS Journal of Solid State Science and Technology.  6 (2017)  8 - p. P547-P552 , 2017
Link: https://doi.org/10.1149/..
 
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3

Reduction of background carrier concentration and lifetime ..:

Nishio, Johji ; Kushibe, Mitsuhiro ; Asamizu, Hirokuni..
Japanese Journal of Applied Physics.  56 (2017)  8 - p. 081302 , 2017
Link: https://doi.org/10.7567/..
 
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4

Improvement of 4H-SiC Epitaxial Layers Grown on 2o Offcut S..:

Asamizu, Hirokuni ; Yamada, Keiichi ; Tamura, Kentaro...
Materials Science Forum.  858 (2016)  - p. 133-136 , 2016
Link: https://doi.org/10.4028/..
 
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5

Reduction in Background Carrier Concentration for 4H-SiC C-..:

Nishio, Johji ; Asamizu, Hirokuni ; Kushibe, Mitsuhiro..
MRS Advances.  1 (2016)  54 - p. 3631-3636 , 2016
Link: https://doi.org/10.1557/..
 
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6

Starting Point of Step-Bunching Defects on 4H-SiC Si-Face S..:

Tamura, Kentaro ; Sasaki, Masayuki ; Kudou, Chiaki...
Materials Science Forum.  821-823 (2015)  - p. 367-370 , 2015
Link: https://doi.org/10.4028/..
 
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7

Uniformity Improvement in Carrier Concentration on 150 mm D..:

Nishio, Johji ; Asamizu, Hirokuni ; Kudou, Chiaki...
Materials Science Forum.  821-823 (2015)  - p. 169-172 , 2015
Link: https://doi.org/10.4028/..
 
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8

Influence of Epi-Layer Growth Pits on SiC Device Characteri..:

Kudou, Chiaki ; Asamizu, Hirokuni ; Tamura, Kentaro...
Materials Science Forum.  821-823 (2015)  - p. 177-180 , 2015
Link: https://doi.org/10.4028/..
 
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9

Homoepitaxial growth and investigation of stacking faults o..:

Masumoto, Keiko ; Asamizu, Hirokuni ; Tamura, Kentaro...
Japanese Journal of Applied Physics.  54 (2015)  4S - p. 04DP04 , 2015
Link: https://doi.org/10.7567/..
 
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10

Suppression of 3C-Inclusion Formation during Growth of4H-Si..:

Masumoto, Keiko ; Asamizu, Hirokuni ; Tamura, Kentaro...
Materials.  7 (2014)  10 - p. 7010-7021 , 2014
Link: https://doi.org/10.3390/..
 
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11

Correlation between Optical Polarization and Luminescence M..:

Masui, Hisashi ; Asamizu, Hirokuni ; Tyagi, Anurag...
Applied Physics Express.  2 (2009)  - p. 071002 , 2009
Link: https://doi.org/10.1143/..
 
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12

Effects of piezoelectric fields on optoelectronic propertie..:

Masui, Hisashi ; Asamizu, Hirokuni ; Melo, Thiago...
Journal of Physics D: Applied Physics.  42 (2009)  13 - p. 135106 , 2009
Link: https://doi.org/10.1088/..
 
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13

Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semi..:

Asamizu, Hirokuni ; Saito, Makoto ; Fujito, Kenji...
Applied Physics Express.  2 (2009)  - p. 021002 , 2009
Link: https://doi.org/10.1143/..
 
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14

High Power and High Efficiency Semipolar InGaN Light Emitti..:

SATO, Hitoshi ; HIRASAWA, Hirohiko ; ASAMIZU, Hirokuni...
Journal of Light & Visual Environment.  32 (2008)  2 - p. 107-110 , 2008
Link: https://doi.org/10.2150/..
 
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15

Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated o..:

Asamizu, Hirokuni ; Saito, Makoto ; Fujito, Kenji...
Applied Physics Express.  1 (2008)  - p. 091102 , 2008
Link: https://doi.org/10.1143/..
 
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