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Asenov, A.
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1

How the Flat Field Transistor (FFT) can enable the continua..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Adamu-Lema, F. ; Dutta, T. ; Bensouiah, D... - p. 221-224 , 2023
Link: https://doi.org/10.23919..
 
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2

A Combined First Principles and Kinetic Monte Carlo study o..:

, In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Lapham, P. ; Badami, O. ; Medina-Bailon, C.... - p. 273-276 , 2020
Link: https://doi.org/10.23919..
 
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3

The Use of Tcad Simulations in Semiconductor Devices Teachi..:

, In: 2020 Transnational Engineering Education using Technology (TREET),
Xeni, N. ; Ghannam, R. ; Adamu-Lema, F.... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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4

Simulation of gated GaAs-AlGaAs resonant tunneling diodes f..:

, In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Georgiev, V. P. ; Sengupta, A. ; Maciazek, P.... - p. 241-244 , 2020
Link: https://doi.org/10.23919..
 
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5

RTN and Its Intrinsic Interaction with Statistical Variabil..:

, In: Noise in Nanoscale Semiconductor Devices,
Adamu-Lema, F. ; Compagnoni, C. Monzio ; Badami, O... - p. 441-466 , 2020
Link: https://doi.org/10.1007/..
 
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6

Modelling passenger service rate at a transport hub service..:

Asenov, A ; Pencheva, V ; Georgiev, I
IOP Conference Series: Materials Science and Engineering.  664 (2019)  1 - p. 012034 , 2019
Link: https://doi.org/10.1088/..
 
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7

Simulation of Statistical NBTI Degradation in 10nm Doped Ch..:

, In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Adamu-Lema, F ; Georgiev, V. ; Asenov, A. - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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8

Efficient Coupled-mode space based Non-Equilibrium Green's ..:

, In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Thirunavukkarasu, V. ; Georgiev, V. ; Asenov, A.... - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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9

A review of the Z 2 -FET 1T-DRAM memory: Operation mechanis..:

Cristoloveanu, S. ; Lee, K.H. ; Parihar, M.S....
Solid-State Electronics.  143 (2018)  - p. 10-19 , 2018
Link: https://doi.org/10.1016/..
 
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10

A Carrier Lifetime Sensitivity Probe Based on Transient Cap..:

, In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Adamu-Lema, F. ; Duan, M. ; Georgiev, V.. - p. 232-235 , 2018
Link: https://doi.org/10.1109/..
 
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11

Process Variability for Devices at and beyond the 7 nm Node:

Lorenz, J. K. ; Asenov, A. ; Baer, E....
ECS Journal of Solid State Science and Technology.  7 (2018)  11 - p. P595-P601 , 2018
Link: https://doi.org/10.1149/..
 
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12

Performance of vertically stacked horizontal Si nanowires t..:

, In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC),
Al-Ameri, Talib ; Georgiev, V. P. ; Lema, F. Adamu... - p. 1-2 , 2016
Link: https://doi.org/10.1109/..
 
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13

Comparison of Siandcrystal orientation nanowire transistor ..:

Gerrer, L. ; Georgiev, V. ; Amoroso, S.M...
Microelectronics Reliability.  55 (2015)  9-10 - p. 1307-1312 , 2015
Link: https://doi.org/10.1016/..
 
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14

Understanding variability in complementary metal oxide semi..:

, In: Silicon-On-Insulator (SOI) Technology,
Markov, S. ; Cheng, B. ; Zain, A.S.M.. - p. 212-242 , 2014
Link: https://doi.org/10.1533/..
 
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15

Contributor contact details:

, In: Silicon-On-Insulator (SOI) Technology,
Kononchuk, O. ; Nguyen, B.-Y. ; Moriceau, H.... - p. xi-xiii , 2014
Link: https://doi.org/10.1016/..
 
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