E-LIB Suche - Ergebnisse für: Assali, S

1

Advances in GeSn alloys for MIR applications:

Reboud, V. ; Concepción, O. ; Du, W....
Photonics and Nanostructures - Fundamentals and Applications. 58 (2024) - p. 101233 , 2024

Link: https://doi.org/10.1016/..

2

Enhancing the Detectivity of Direct Bandgap Ge0.86Sn0.14 Ph..:

, In: 2024 IEEE Silicon Photonics Conference (SiPhotonics),

Cardoux, C. ; Kroemer, E. ; Casiez, L.... - p. 1-2 , 2024

Link: https://doi.org/10.1109/..

3

Transfer-printing of GeSn membranes for broadband photodete..:

, In: 2023 IEEE Photonics Conference (IPC),

Lemieux-Leduc, C. ; Atalla, M. R. M. ; Assali, S.... - p. 1-2 , 2023

Link: https://doi.org/10.1109/..

4

Dark current in monolithic extended-SWIR GeSn PIN photodete..:

Atalla, M. R. M. ; Assali, S. ; Koelling, S...
Applied Physics Letters. 122 (2023) 3 - p. , 2023

Link: https://doi.org/10.1063/..

5

Structural and Chemical Characterization of Ge/GeSn Core/Sh..:

Andelic, Milenka ; Pofelski, A ; Assali, S...
Microscopy and Microanalysis. 28 (2022) S1 - p. 2430-2431 , 2022

Link: https://doi.org/10.1017/..

6

Recrystallization and interdiffusion processes in laser-ann..:

Abdi, S. ; Assali, S. ; Atalla, M. R. M....
Journal of Applied Physics. 131 (2022) 10 - p. , 2022

Link: https://doi.org/10.1063/..

7

Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for ..:

Assali, S. ; Attiaoui, A. ; Koelling, S....
Journal of Applied Physics. 132 (2022) 19 - p. , 2022

Link: https://doi.org/10.1063/..

8

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on..:

Assali, S. ; Koelling, S. ; Abboud, Z....
Journal of Applied Physics. 132 (2022) 17 - p. , 2022

Link: https://doi.org/10.1063/..

9

Monolithic infrared silicon photonics: The rise of (Si)GeSn..:

Moutanabbir, O. ; Assali, S. ; Gong, X....
Applied Physics Letters. 118 (2021) 11 - p. , 2021

Link: https://doi.org/10.1063/..

10

Extended Short-Wave Infrared Absorption in Group-IV Nanowir..:

Attiaoui, A. ; Bouthillier, É. ; Daligou, G....
Physical Review Applied. 15 (2021) 1 - p. , 2021

Link: https://doi.org/10.1103/..

11

Midinfrared Emission and Absorption in Strained and Relaxed..:

Assali, S. ; Dijkstra, A. ; Attiaoui, A....
Physical Review Applied. 15 (2021) 2 - p. , 2021

Link: https://doi.org/10.1103/..

12

Decoupling the effects of composition and strain on the vib..:

Bouthillier, É ; Assali, S ; Nicolas, J.
Semiconductor Science and Technology. 35 (2020) 9 - p. 095006 , 2020

Link: https://doi.org/10.1088/..

13

Enhanced Sn incorporation in GeSn epitaxial semiconductors ..:

Assali, S. ; Nicolas, J. ; Moutanabbir, O.
Journal of Applied Physics. 125 (2019) 2 - p. , 2019

Link: https://doi.org/10.1063/..

14

Strain engineering in Ge/GeSn core/shell nanowires:

Assali, S. ; Albani, M. ; Bergamaschini, R....
Applied Physics Letters. 115 (2019) 11 - p. , 2019

Link: https://doi.org/10.1063/..

15

Vacancy complexes in nonequilibrium germanium-tin semicondu..:

Assali, S. ; Elsayed, M. ; Nicolas, J....
Applied Physics Letters. 114 (2019) 25 - p. , 2019

Link: https://doi.org/10.1063/..