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Asubar, J. T.
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1

High performance normally-off recessed-gate GaN-based MIS-H..:

, In: 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
Ishiguro, M. ; Terai, S. ; Sekiyama, K.... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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2

AlGaN/GaN Schottky-Gate HEMTs with low thermal budget V/Al/..:

, In: 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
Igarashi, T. ; Maeda, S. ; Baratov, A... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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3

Effect of Oxygen plasma treatment on the performance of GaN..:

, In: 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
Sekiyama, K. ; Ishiguro, M. ; Yamazaki, S.... - p. 1-3 , 2022
Link: https://doi.org/10.1109/..
 
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4

Effect of High-Temperature Annealed Al2O3 insulator on GaN ..:

, In: 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
Lau, B. D. D ; Yamazaki, S. ; Urano, S.... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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5

Quasi-Normally-Off operation via Selective Area Growth in h..:

, In: 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
Maeda, S. ; Asubar, J. T. ; Nagase, I.... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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6

Improved Ohmic Contact Model for Accurate Simulation of GaN..:

, In: 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
Sakota, K. ; Herbert, K. ; Shibata, K.... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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7

Enhanced gain characteristics of AlGaN/GaN MOS-HEMTs with A..:

, In: 2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK),
Shibata, K. ; Herbert, K. ; Kuzuhara, M.... - p. 1-2 , 2021
Link: https://doi.org/10.1109/..
 
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8

Impact of SiN capping during Ohmic Annealing on Performance..:

, In: 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
Low, R. S. ; Kawabata, S. ; Asubar, J. T... - p. 77-78 , 2019
Link: https://doi.org/10.1109/..
 
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9

Improved on-state breakdown characteristics in AlGaN/GaN MO..:

, In: 2019 Compound Semiconductor Week (CSW),
Nishitani, T. ; Yamaguchi, R. ; Asubar, J. T... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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10

MBE growth and properties of GeMn thin films on (001) GaAs:

Tsuchida, R. ; Asubar, J.T. ; Jinbo, Y..
Journal of Crystal Growth.  311 (2009)  3 - p. 937-940 , 2009
Link: https://doi.org/10.1016/..
 
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11

Low-temperature annealing effects on (Ga,Mn)As/Zn-GaAs supe..:

Asubar, J.T. ; Nakagawa, H. ; Jinbo, Y..
Journal of Crystal Growth.  311 (2009)  3 - p. 933-936 , 2009
Link: https://doi.org/10.1016/..
 
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12

Comparison of annealing effects on Zn-doped GaMnAs and undo..:

Nakagawa, H. ; Asubar, J.T. ; Jinbo, Y..
Applied Surface Science.  254 (2008)  20 - p. 6648-6652 , 2008
Link: https://doi.org/10.1016/..
 
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13

MBE growth of Mn-doped Zn–Sn–As compounds on (001) InP subs..:

Asubar, J.T. ; Kato, A. ; Kambayashi, T....
Journal of Crystal Growth.  301-302 (2007)  - p. 656-661 , 2007
Link: https://doi.org/10.1016/..
 
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14

MBE growth and properties of GaMnAs with high level of Zn a..:

Asubar, J. T. ; Sato, S. ; Jinbo, Y..
physica status solidi (a).  203 (2006)  11 - p. 2778-2782 , 2006
Link: https://doi.org/10.1002/..
 
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15

Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical ..:

Nezu, Toi ; Maeda, Shogo ; Baratov, Ali...
physica status solidi (a).  , 2024
Link: https://doi.org/10.1002/..
 
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