E-LIB Suche - Ergebnisse für: Aubin, Joris

1

Progress in Germanium Tin (GeSn) Photonic Crystal Lasers:

Thai, Quang Minh ; Chretien, Jeremie ; Bertrand, Mathieu...
IEEE Journal of Selected Topics in Quantum Electronics. 28 (2022) 1: Semiconductor Lasers - p. 1-9 , 2022

Link: https://doi.org/10.1109/..

2

Solid phase recrystallization induced by multi-pulse nanose..:

Acosta Alba, Pablo ; Aubin, Joris ; Perrot, Sylvain...
Applied Surface Science Advances. 3 (2021) - p. 100053 , 2021

Link: https://doi.org/10.1016/..

3

Multilayered highly-active dopant distribution by UV nanose..:

Tabata, Toshiyuki ; Aubin, Joris ; Mazzamuto, Fulvio
Japanese Journal of Applied Physics. 59 (2020) 5 - p. 050903 , 2020

Link: https://doi.org/10.35848..

4

Segregation and activation of Ga in high Ge content SiGe by..:

Tabata, Toshiyuki ; Aubin, Joris ; Huet, Karim.
Journal of Applied Physics. 125 (2019) 21 - p. , 2019

Link: https://doi.org/10.1063/..

5

(Invited) Laser Thermal Annealing for Low Thermal Budget Ap..:

Huet, Karim ; Tabata, Toshiyuki ; Aubin, Joris...
ECS Transactions. 89 (2019) 3 - p. 137-153 , 2019

Link: https://doi.org/10.1149/..

6

Experimental Calibration of Sn‐Related Varshni Parameters f..:

Bertrand, Mathieu ; Thai, Quang‐Minh ; Chrétien, Jérémie...
Annalen der Physik. 531 (2019) 6 - p. , 2019

Link: https://doi.org/10.1002/..

7

Impact of Wet Treatments on the Electrical Performance of G..:

Mahjoub, Mohamed Aymen ; Haffner, Thibault ; Labau, Sébastien...
ACS Applied Electronic Materials. 1 (2019) 2 - p. 260-268 , 2019

Link: https://doi.org/10.1021/..

8

Comparative Analysis of Ni- and Ni0.9Pt0.1-Ge0.9Sn0.1 Solid..:

Quintero, Andrea ; Gergaud, Patrice ; Aubin, Joris...
ECS Transactions. 86 (2018) 7 - p. 299-307 , 2018

Link: https://doi.org/10.1149/..

9

GeSn heterostructure micro-disk laser operating at 230 K:

Thai, Quang Minh ; Pauc, Nicolas ; Aubin, Joris...
Optics Express. 26 (2018) 25 - p. 32500 , 2018

Link: https://doi.org/10.1364/..

10

Composition and Strain Evolution of Undoped Si0.8Ge0.2 Laye..:

Dagault, Lea ; Acosta-Alba, Pablo ; Kerdilès, Sébastien...
ECS Transactions. 86 (2018) 7 - p. 29-39 , 2018

Link: https://doi.org/10.1149/..

11

Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layer..:

Khazaka, Rami ; Aubin, Joris ; Nolot, Emmanuel.
ECS Transactions. 86 (2018) 7 - p. 207-218 , 2018

Link: https://doi.org/10.1149/..

12

Growth and characterization of SiGeSn pseudomorphic layers ..:

Khazaka, Rami ; Nolot, Emmanuel ; Aubin, Joris.
Semiconductor Science and Technology. 33 (2018) 12 - p. 124011 , 2018

Link: https://doi.org/10.1088/..

13

Investigation of the Low Temperature / High Temperature App..:

Hartmann, Jean-Michel ; Aubin, Joris ; Bogumilowicz, Yann..
ECS Transactions. 75 (2016) 8 - p. 579-588 , 2016

Link: https://doi.org/10.1149/..

14

Very Low Temperature Epitaxy of Heavily In-situ Phosphorous..:

Aubin, Joris ; Hartmann, Jean-Michel ; Barnes, Jean-Paul..
ECS Transactions. 75 (2016) 8 - p. 387-398 , 2016

Link: https://doi.org/10.1149/..

15

A Benchmark of Germane and Digermane for the Low Temperatur..:

Hartmann, Jean-Michel ; Aubin, Joris ; Barnes, Jean-Paul
ECS Transactions. 75 (2016) 8 - p. 281-293 , 2016

Link: https://doi.org/10.1149/..