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Böscke, Tim S
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1

Ferroelectricity in Simple Binary ZrO2 and HfO2:

Müller, Johannes ; Böscke, Tim S. ; Schröder, Uwe...
Nano Letters.  12 (2012)  8 - p. 4318-4323 , 2012
Link: https://doi.org/10.1021/..
 
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2

Stabilization of higher-k tetragonal HfO/sub 2/ by SiO/sub ..:

Böscke, Tim S ; Govindarajan, Shrinivas ; Kirsch, Paul D...
Applied physics letters. Vol. 91, no. 7 (Aug. 2007), 072902, 3 p..  , 2007
Link: http://hdl.handle.net/10..
 
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3

Bifacial n-type cells with >20% front-side efficiency for i..:

, In: 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2,
Boscke, T. S. ; Kania, D. ; Helbig, A.... - p. 1-4 , 2012
Link: https://doi.org/10.1109/..
 
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4

Ferroelectricity in yttrium-doped hafnium oxide:

Müller, J. ; Schröder, U. ; Böscke, T. S....
Journal of Applied Physics.  110 (2011)  11 - p. , 2011
Link: https://doi.org/10.1063/..
 
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5

Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memor..:

Müller, J. ; Böscke, T. S. ; Bräuhaus, D....
Applied Physics Letters.  99 (2011)  11 - p. , 2011
Link: https://doi.org/10.1063/..
 
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6

Phase transitions in ferroelectric silicon doped hafnium ox..:

Böscke, T. S. ; Teichert, St. ; Bräuhaus, D....
Applied Physics Letters.  99 (2011)  11 - p. , 2011
Link: https://doi.org/10.1063/..
 
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7

Ferroelectricity in hafnium oxide thin films:

Böscke, T. S. ; Müller, J. ; Bräuhaus, D...
Applied Physics Letters.  99 (2011)  10 - p. , 2011
Link: https://doi.org/10.1063/..
 
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8

Improved manufacturability of ZrO2 MIM capacitors by proces..:

Müller, J. ; Böscke, T.S. ; Schröder, U....
Microelectronic Engineering.  86 (2009)  7-9 - p. 1818-1821 , 2009
Link: https://doi.org/10.1016/..
 
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9

Increasing permittivity in HfZrO thin films by surface mani..:

Böscke, T. S. ; Hung, P. Y. ; Kirsch, P. D...
Applied Physics Letters.  95 (2009)  5 - p. , 2009
Link: https://doi.org/10.1063/..
 
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10

Dipole model explaining high-k/metal gate field effect tran..:

Kirsch, P. D. ; Sivasubramani, P. ; Huang, J....
Applied Physics Letters.  92 (2008)  9 - p. , 2008
Link: https://doi.org/10.1063/..
 
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11

Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture..:

Böscke, T. S. ; Govindarajan, S. ; Kirsch, P. D....
Applied Physics Letters.  91 (2007)  7 - p. , 2007
Link: https://doi.org/10.1063/..
 
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12

Higher permittivity rare earth doped HfO2 for sub-45-nm met..:

Govindarajan, S. ; Böscke, T. S. ; Sivasubramani, P....
Applied Physics Letters.  91 (2007)  6 - p. , 2007
Link: https://doi.org/10.1063/..
 
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13

Improving screen printed metallization for large area indus..:

Edler, Alexander ; Mihailetchi, Valentin ; Kopecek, Radovan...
Energy Procedia.  8 (2011)  - p. 493-497 , 2011
Link: https://doi.org/10.1016/..
 
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14

The Application of X-ray Metrology for Rapid Development of..:

Hung, Pui Yee ; Böscke, Tim ; Wormington, Matthew...
ECS Transactions.  16 (2008)  5 - p. 149-152 , 2008
Link: https://doi.org/10.1149/..
 
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15

Decision-making in the treatment of chronic rhinosinusitis ..:

Hoffmann, Anna S. ; Betz, Christian S. ; Böscke, Robert.
HNO.  72 (2024)  4 - p. 225-230 , 2024
Link: https://doi.org/10.1007/..
 
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