Babentsov, V. N.
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1

Compensation of native defects in PbTe and Pb1–xSnx Te:

Babentsov, V. N. ; Sizov, F. F.
physica status solidi (b).  245 (2008)  1 - p. 50-52 , 2008
 
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Short-time annealing of as-grown p-CdTe wafers:

Sochinskii, N V ; Serrano, M D ; Babentsov, V N...
Semiconductor Science and Technology.  9 (1994)  9 - p. 1713-1718 , 1994
 
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10

Characterization of compensation and trapping in CdTe and C..:

Babentsov, V. ; Franc, J. ; Höschl, P....
Crystal Research and Technology.  44 (2009)  10 - p. 1054-1058 , 2009
 
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13

Dislocation-induced electronic levels in semi-insulated CdT:

Babentsov, V. ; Boiko, V. ; Schepelskii, G.A....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.  633 (2011)  - p. S81-S82 , 2011
 
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