Badalà, P.
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1

Image analysis development for optimization of 4H–SiC trenc..:

Barcellona, M. ; Badalà, P. ; Boscaglia, M....
Materials Science in Semiconductor Processing.  174 (2024)  - p. 108216 , 2024
 
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Barrier height tuning in Ti/4H-SiC Schottky diodes:

Bellocchi, G. ; Vivona, M. ; Bongiorno, C....
Solid-State Electronics.  186 (2021)  - p. 108042 , 2021
 
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4

Morphological and electrical properties of Nickel based Ohm..:

Rascunà, S. ; Badalà, P. ; Tringali, C....
Materials Science in Semiconductor Processing.  97 (2019)  - p. 62-66 , 2019
 
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SiC Detector for Sub-MeV Alpha Spectrometry:

Torrisi, L. ; Sciuto, A. ; Cannavò, A....
Journal of Electronic Materials.  46 (2017)  7 - p. 4242-4249 , 2017
 
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6

Towards a high performing UV-A sensor based on Silicon Carb..:

Mazzillo, M. ; Sciuto, A. ; Mannino, G....
Journal of Instrumentation.  11 (2016)  10 - p. P10010-P10010 , 2016
 
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8

Role of Si self-interstitials on the electrical de-activati..:

Piro, A.M. ; Romano, L. ; Badalà, P....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  242 (2006)  1-2 - p. 656-658 , 2006
 
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Cross section of the interaction between substitutional B a..:

Piro, A M ; Romano, L ; Badalà, P...
Journal of Physics: Condensed Matter.  17 (2005)  22 - p. S2273-S2277 , 2005
 
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14

Elliptic flow of charged particles at midrapidity relative ..:

Acharya S ; Adamova D ; Adler A...
info:eu-repo/semantics/altIdentifier/wos/WOS:001088264400001.  , 2023
 
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15

Investigation of K plus K- interactions via femtoscopy in P..:

Acharya S ; Adamová D ; Adler A...
Science and Technology Facilities Council (2007- ).  , 2023
 
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