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Ban, Sanghyun
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1

Understanding Switching Mechanism of Selector-Only Memory U..:

Lee, Jangseop ; Seo, Yoori ; Ban, Sanghyun...
IEEE Transactions on Electron Devices.  71 (2024)  5 - p. 3351-3357 , 2024
Link: https://doi.org/10.1109/..
 
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2

Publisher's Note: "Improving the selector characteristics o..:

Seo, Yoori ; Lee, Jangseop ; Ban, Sanghyun...
Applied Physics Letters.  124 (2024)  1 - p. , 2024
Link: https://doi.org/10.1063/..
 
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3

Subthreshold Bias-Induced Threshold Voltage Shift of the Ov..:

Ban, Sanghyun ; Lee, Jangseop ; Seo, Yoori...
IEEE Electron Device Letters.  45 (2024)  1 - p. 128-131 , 2024
Link: https://doi.org/10.1109/..
 
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4

Cell Design Considerations for Ovonic Threshold Switch-Base..:

Ban, Sanghyun ; Lee, Jangseop ; Kim, Taehoon.
IEEE Transactions on Electron Devices.  70 (2023)  3 - p. 1034-1041 , 2023
Link: https://doi.org/10.1109/..
 
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5

Experimental Demonstration of Probabilistic-Bit (p-bit) Uti..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Heo, Seongjae ; Kim, Dongmin ; Choi, Wooseok... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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6

Defect Engineering of BTe Ovonic Threshold Switch (OTS) Wit..:

Lee, Jangseop ; Ban, Sanghyun ; Lee, Tae Hoon.
IEEE Electron Device Letters.  44 (2023)  9 - p. 1468-1471 , 2023
Link: https://doi.org/10.1109/..
 
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7

Improving the selector characteristics of ovonic threshold ..:

Seo, Yoori ; Lee, Jangseop ; Ban, Sanghyun...
Applied Physics Letters.  123 (2023)  24 - p. , 2023
Link: https://doi.org/10.1063/..
 
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8

Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Ban, Sanghyun ; Lee, Jangseop ; Kim, Taehoon. - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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9

Enhancing Se-based Selector-only Memory with Ultra-fast Wri..:

, In: 2023 International Electron Devices Meeting (IEDM),
Lee, Jangseop ; Seo, Yoori ; Ban, Sanghyun... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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10

Excellent Reliability Characteristics of Ovonic Threshold S..:

Lee, Jangseop ; Ban, Sanghyun ; Seo, Yoori..
physica status solidi (RRL) – Rapid Research Letters.  , 2023
Link: https://doi.org/10.1002/..
 
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11

Read Disturbance in Cross-Point Phase-Change Memory Arrays—..:

Kim, Donguk ; Jang, Jun Tae ; Kim, Changwook...
IEEE Transactions on Electron Devices.  70 (2023)  2 - p. 521-526 , 2023
Link: https://doi.org/10.1109/..
 
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12

Read Disturbances in Cross-Point Phase-Change Memory Arrays..:

Kim, Donguk ; Jang, Jun Tae ; Kim, Changwook...
IEEE Transactions on Electron Devices.  70 (2023)  2 - p. 514-520 , 2023
Link: https://doi.org/10.1109/..
 
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13

Effect of Silicon Doping in B–Te (B4Te₆) Binary Ovonic Thre..:

Ban, Sanghyun ; Lee, Sangmin ; Lee, Jangseop.
IEEE Electron Device Letters.  43 (2022)  4 - p. 643-646 , 2022
Link: https://doi.org/10.1109/..
 
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14

Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Cha..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Lee, Jangseop ; Kim, Seonghun ; Lee, Sangmin... - p. 320-321 , 2022
Link: https://doi.org/10.1109/..
 
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15

A physics-based compact model of phase change for the desig..:

Kim, Donguk ; Tae Jang, Jun ; Myong Kim, Dong...
Solid-State Electronics.  185 (2021)  - p. 107955 , 2021
Link: https://doi.org/10.1016/..
 
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