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Bastiman, Faebian
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1

Analysis of incubation time preceding the Ga-assisted nucle..:

Bastiman, Faebian ; Küpers, Hanno ; Somaschini, Claudio..
Physical Review Materials.  3 (2019)  7 - p. , 2019
Link: https://doi.org/10.1103/..
 
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2

Diameter evolution of selective area grown Ga-assisted GaAs..:

Küpers, Hanno ; Lewis, Ryan B. ; Tahraoui, Abbes...
Nano Research.  11 (2018)  5 - p. 2885-2893 , 2018
Link: https://doi.org/10.1007/..
 
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3

Surface preparation and patterning by nano imprint lithogra..:

Küpers, Hanno ; Tahraoui, Abbes ; Lewis, Ryan B...
Semiconductor Science and Technology.  32 (2017)  11 - p. 115003 , 2017
Link: https://doi.org/10.1088/..
 
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4

Ga predeposition for the Ga-assisted growth of GaAs nanowir..:

Küpers, Hanno ; Bastiman, Faebian ; Luna, Esperanza..
Journal of Crystal Growth.  459 (2017)  - p. 43-49 , 2017
Link: https://doi.org/10.1016/..
 
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5

Telecommunication wavelength GaAsBi light emitting diodes:

Richards, Robert Douglas ; Hunter, Christopher Jack ; Bastiman, Faebian..
IET Optoelectronics.  10 (2016)  2 - p. 34-38 , 2016
Link: https://doi.org/10.1049/..
 
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6

MBE grown GaAsBi/GaAs multiple quantum well structures: Str..:

Richards, Robert D ; Bastiman, Faebian ; Roberts, John S...
Journal of Crystal Growth.  425 (2015)  - p. 237-240 , 2015
Link: https://doi.org/10.1016/..
 
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7

Absorption properties of GaAsBi based p–i–n heterojunction ..:

Zhou, Zhize ; Mendes, Danuta F ; Richards, Robert D..
Semiconductor Science and Technology.  30 (2015)  9 - p. 094004 , 2015
Link: https://doi.org/10.1088/..
 
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8

Growth and structural characterization of GaAsBi/GaAs multi..:

Richards, Robert D ; Bastiman, Faebian ; Walker, David..
Semiconductor Science and Technology.  30 (2015)  9 - p. 094013 , 2015
Link: https://doi.org/10.1088/..
 
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9

Bismuth incorporation and the role of ordering in GaAsBi/Ga..:

Reyes, Daniel F ; Bastiman, Faebian ; Hunter, Chris J...
Nanoscale Research Letters.  9 (2014)  1 - p. , 2014
Link: https://doi.org/10.1186/..
 
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10

Scanning transmission electron microscopy measurement of bi..:

Walther, Thomas ; Richards, Robert D. ; Bastiman, Faebian
Crystal Research and Technology.  50 (2014)  1 - p. 38-42 , 2014
Link: https://doi.org/10.1002/..
 
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11

Molecular beam epitaxy growth of GaAsBi using As2 and As4:

Richards, Robert D. ; Bastiman, Faebian ; Hunter, Christopher J....
Journal of Crystal Growth.  390 (2014)  - p. 120-124 , 2014
Link: https://doi.org/10.1016/..
 
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12

Polariton condensation in a strain-compensated planar micro..:

Cilibrizzi, Pasquale ; Askitopoulos, Alexis ; Silva, Matteo...
Applied Physics Letters.  105 (2014)  19 - p. , 2014
Link: https://doi.org/10.1063/..
 
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13

Photoluminescence Enhancement of InAs(Bi) Quantum Dots by B..:

Reyes, Daniel F. ; González, David ; Bastiman, Faebian...
Applied Physics Express.  6 (2013)  4 - p. 042103 , 2013
Link: https://doi.org/10.7567/..
 
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14

Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) H..:

Dominguez, Lara ; Reyes, Daniel F. ; Bastiman, Faebian...
Applied Physics Express.  6 (2013)  11 - p. 112601 , 2013
Link: https://doi.org/10.7567/..
 
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15

Analysis of incubation time preceding the Ga-assisted nucle..:

Bastiman, Faebian ; Küpers, Hanno ; Somaschini, Claudio..
http://arxiv.org/abs/1907.04249.  , 2019
Link: http://arxiv.org/abs/190..
 
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