Bea, C.
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1

Nano Ni/Cu-TSVs with an Improved Reliability for 3D-IC Inte..:

, In: 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC),
Murugesan, M. ; Mori, K. ; Kojima, T.... - p. 1-5 , 2020
 
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2

High aspect ratio through-silicon-via formation by using lo..:

Murugesan, M. ; Mori, K. ; Bea, J.C...
Japanese Journal of Applied Physics.  59 (2020)  SG - p. SGGC02 , 2020
 
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3

Mechanical characteristics of thin dies/wafers in three-dim..:

, In: ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference,
Murugesan, M. ; Fukushima, T ; Bea, J. C.... - p. 66-69 , 2013
 
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4

High-step-coverage Cu-lateral interconnections over 100 µm ..:

Murugesan, M ; Fukushima, T ; Kiyoyama, K...
Journal of Micromechanics and Microengineering.  22 (2012)  8 - p. 085033 , 2012
 
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6

MOSFET nonvolatile memory with a high-density tungsten nano..:

Pei, Y ; Yin, C ; Bea, J C...
Semiconductor Science and Technology.  24 (2009)  4 - p. 045022 , 2009
 
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9

Dysthymic disorder: Treatment with citalopram:

Dunner, D.L. ; Hendrickson, H.E. ; Bea, C...
European Neuropsychopharmacology.  11 (2001)  - p. S193 , 2001
 
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