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Beheim, Glenn M.
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1

Prolonged 500°C Operation of 100+ Transistor Silicon Carbid..:

Spry, David J. ; Neudeck, Philip G. ; Lukco, Dorothy...
Materials Science Forum.  924 (2018)  - p. 949-952 , 2018
Link: https://doi.org/10.4028/..
 
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2

Experimentally Observed Electrical Durability of 4H-SiC JFE..:

Neudeck, Philip G. ; Spry, David J. ; Chen, Liang Yu...
Materials Science Forum.  897 (2017)  - p. 567-570 , 2017
Link: https://doi.org/10.4028/..
 
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3

Evidence of Processing Non-Idealities in 4H-SiC Integrated ..:

Spry, David J. ; Neudeck, Philip G. ; Chen, Liang Yu...
Materials Science Forum.  858 (2016)  - p. 1112-1116 , 2016
Link: https://doi.org/10.4028/..
 
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4

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Inte..:

Spry, David J. ; Neudeck, Philip G. ; Chen, Liang Yu...
Materials Science Forum.  858 (2016)  - p. 908-912 , 2016
Link: https://doi.org/10.4028/..
 
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5

Electrical Characterization of a 4H-SiC JFET Wafer: DC Para..:

Neudeck, Philip G. ; Chen, Liang Yu ; Spry, David J...
Materials Science Forum.  821-823 (2015)  - p. 781-784 , 2015
Link: https://doi.org/10.4028/..
 
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6

4H-SiC JFET Multilayer Integrated Circuit Technologies Test..:

Spry, David J ; Neudeck, Phil G ; Chen, Liangyu...
ECS Transactions.  69 (2015)  11 - p. 113-121 , 2015
Link: https://doi.org/10.1149/..
 
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7

High Temperature Capacitive Pressure Sensor Employing a SiC..:

Meredith, Roger D. ; Neudeck, Philip G. ; Ponchak, G.E....
Materials Science Forum.  717-720 (2012)  - p. 1215-1218 , 2012
Link: https://doi.org/10.4028/..
 
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8

Packaging Technologies for 500°C SiC Electronics and Sensor:

Chen, Liang Yu ; Johnson, R. Wayne ; Neudeck, Philip G....
Materials Science Forum.  717-720 (2012)  - p. 1033-1036 , 2012
Link: https://doi.org/10.4028/..
 
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9

Extreme temperature 6H‐SiC JFET integrated circuit technolo..:

Neudeck, Philip G. ; Garverick, Steven L. ; Spry, David J....
physica status solidi (a).  206 (2009)  10 - p. 2329-2345 , 2009
Link: https://doi.org/10.1002/..
 
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10

Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circui..:

Neudeck, Philip G. ; Spry, David J. ; Chen, Liang Yu...
Materials Science Forum.  615-617 (2009)  - p. 929-932 , 2009
Link: https://doi.org/10.4028/..
 
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11

Silicon Carbide Differential Amplifiers for High-Temperatur..:

Patil, Amita ; Fu, Xiao An ; Neudeck, Philip G....
Materials Science Forum.  600-603 (2008)  - p. 1083-1086 , 2008
Link: https://doi.org/10.4028/..
 
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12

Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °..:

Spry, David J. ; Neudeck, Philip G. ; Chen, Liang Yu...
Materials Science Forum.  600-603 (2008)  - p. 1079-1082 , 2008
Link: https://doi.org/10.4028/..
 
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13

6H-SiC Lateral JFETs for Analog Integrated Circuits:

Fu, Xiao An ; Patil, Amita ; Neudeck, Philip G....
Materials Science Forum.  600-603 (2008)  - p. 1099-1102 , 2008
Link: https://doi.org/10.4028/..
 
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14

SiC Field Effect Transistor Technology Demonstrating Prolon..:

Neudeck, Philip G. ; Spry, David J. ; Chen, Liang Yu...
Materials Science Forum.  556-557 (2007)  - p. 831-834 , 2007
Link: https://doi.org/10.4028/..
 
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15

Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC M..:

Evans, Laura J. ; Beheim, Glenn M.
Materials Science Forum.  527-529 (2006)  - p. 1115-1118 , 2006
Link: https://doi.org/10.4028/..
 
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