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Beheim, Glenn M.
50
results:
Search for persons
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Format
Online (44)
Print (6)
Mediatypes
Books (5)
Articles (Online) (44)
Bookchapter (Print) (1)
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english (25)
german (5)
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1
Prolonged 500°C Operation of 100+ Transistor Silicon Carbid..:
Spry, David J.
;
Neudeck, Philip G.
;
Lukco, Dorothy
...
Materials Science Forum. 924 (2018) - p. 949-952 , 2018
Link:
https://doi.org/10.4028/..
?
2
Experimentally Observed Electrical Durability of 4H-SiC JFE..:
Neudeck, Philip G.
;
Spry, David J.
;
Chen, Liang Yu
...
Materials Science Forum. 897 (2017) - p. 567-570 , 2017
Link:
https://doi.org/10.4028/..
?
3
Evidence of Processing Non-Idealities in 4H-SiC Integrated ..:
Spry, David J.
;
Neudeck, Philip G.
;
Chen, Liang Yu
...
Materials Science Forum. 858 (2016) - p. 1112-1116 , 2016
Link:
https://doi.org/10.4028/..
?
4
Processing and Prolonged 500 °C Testing of 4H-SiC JFET Inte..:
Spry, David J.
;
Neudeck, Philip G.
;
Chen, Liang Yu
...
Materials Science Forum. 858 (2016) - p. 908-912 , 2016
Link:
https://doi.org/10.4028/..
?
5
Electrical Characterization of a 4H-SiC JFET Wafer: DC Para..:
Neudeck, Philip G.
;
Chen, Liang Yu
;
Spry, David J.
..
Materials Science Forum. 821-823 (2015) - p. 781-784 , 2015
Link:
https://doi.org/10.4028/..
?
6
4H-SiC JFET Multilayer Integrated Circuit Technologies Test..:
Spry, David J
;
Neudeck, Phil G
;
Chen, Liangyu
...
ECS Transactions. 69 (2015) 11 - p. 113-121 , 2015
Link:
https://doi.org/10.1149/..
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7
High Temperature Capacitive Pressure Sensor Employing a SiC..:
Meredith, Roger D.
;
Neudeck, Philip G.
;
Ponchak, G.E.
...
Materials Science Forum. 717-720 (2012) - p. 1215-1218 , 2012
Link:
https://doi.org/10.4028/..
?
8
Packaging Technologies for 500°C SiC Electronics and Sensor:
Chen, Liang Yu
;
Johnson, R. Wayne
;
Neudeck, Philip G.
...
Materials Science Forum. 717-720 (2012) - p. 1033-1036 , 2012
Link:
https://doi.org/10.4028/..
?
9
Extreme temperature 6H‐SiC JFET integrated circuit technolo..:
Neudeck, Philip G.
;
Garverick, Steven L.
;
Spry, David J.
...
physica status solidi (a). 206 (2009) 10 - p. 2329-2345 , 2009
Link:
https://doi.org/10.1002/..
?
10
Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circui..:
Neudeck, Philip G.
;
Spry, David J.
;
Chen, Liang Yu
...
Materials Science Forum. 615-617 (2009) - p. 929-932 , 2009
Link:
https://doi.org/10.4028/..
?
11
Silicon Carbide Differential Amplifiers for High-Temperatur..:
Patil, Amita
;
Fu, Xiao An
;
Neudeck, Philip G.
...
Materials Science Forum. 600-603 (2008) - p. 1083-1086 , 2008
Link:
https://doi.org/10.4028/..
?
12
Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °..:
Spry, David J.
;
Neudeck, Philip G.
;
Chen, Liang Yu
...
Materials Science Forum. 600-603 (2008) - p. 1079-1082 , 2008
Link:
https://doi.org/10.4028/..
?
13
6H-SiC Lateral JFETs for Analog Integrated Circuits:
Fu, Xiao An
;
Patil, Amita
;
Neudeck, Philip G.
...
Materials Science Forum. 600-603 (2008) - p. 1099-1102 , 2008
Link:
https://doi.org/10.4028/..
?
14
SiC Field Effect Transistor Technology Demonstrating Prolon..:
Neudeck, Philip G.
;
Spry, David J.
;
Chen, Liang Yu
...
Materials Science Forum. 556-557 (2007) - p. 831-834 , 2007
Link:
https://doi.org/10.4028/..
?
15
Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC M..:
Evans, Laura J.
;
Beheim, Glenn M.
Materials Science Forum. 527-529 (2006) - p. 1115-1118 , 2006
Link:
https://doi.org/10.4028/..
1-15