E-LIB Suche - Ergebnisse für: Bernardini, Jean

1

A new diffusion mechanism for self-compensating impurities ..:

Gontier-Moya, Eliette-Geneviève ; Moya, Fernand ; Bernardini, Jean
International Journal of Materials Research. 95 (2022) 10 - p. 888-894 , 2022

Link: https://doi.org/10.1515/..

2

Nanometric-Size Effect upon Diffusion and Reaction in Semic..:

Portavoce, Alain ; Girardeaux, Christophe ; Tréglia, Guy...
Defect and Diffusion Forum. 323-325 (2012) - p. 433-438 , 2012

Link: https://doi.org/10.4028/..

3

Reactive Diffusion of Thin Si Deposits into Ni (111):

Lalmi, B. ; Girardeaux, C. ; Portavoce, Alain..
Defect and Diffusion Forum. 323-325 (2012) - p. 421-426 , 2012

Link: https://doi.org/10.4028/..

4

Theoretical and Experimental Evidences of Sequential Phase ..:

Portavoce, Alain ; Tréglia, Guy ; Lalmi, Boubekeur...
Solid State Phenomena. 172-174 (2011) - p. 633-639 , 2011

Link: https://doi.org/10.4028/..

5

Simultaneous Measurements of Lattice and Grain Boundary Dif..:

Blum, Ivan ; Portavoce, Alain ; Mangelinck, Dominique...
Defect and Diffusion Forum. 297-301 (2010) - p. 978-983 , 2010

Link: https://doi.org/10.4028/..

6

On the Grain-Boundary Diffusion in Polycrystalline Material..:

Beke, Dezső L. ; Bernardini, Jean
Defect and Diffusion Forum. 297-301 (2010) - p. 1362-1370 , 2010

Link: https://doi.org/10.4028/..

7

Unusual Behaviour of the Dissolutions Kinetics of one Monol..:

Lalmi, Boubekeur ; Girardeaux, Christophe ; Portavoce, Alain..
Defect and Diffusion Forum. 289-292 (2009) - p. 601-606 , 2009

Link: https://doi.org/10.4028/..

8

Atom Redistribution during co-Doped Amorphous Silicon Cryst..:

Portavoce, Alain ; Mangelinck, Dominique ; Simola, Roberto..
Defect and Diffusion Forum. 289-292 (2009) - p. 329-337 , 2009

Link: https://doi.org/10.4028/..

9

Thin Film Dissolution into Semi-Infinite Substrates: Surpri..:

Erdélyi, Z. ; Girardeaux, Christophe ; Beke, Dezső L....
Defect and Diffusion Forum. 289-292 (2009) - p. 573-585 , 2009

Link: https://doi.org/10.4028/..

10

Determination of Grain Boundary Diffusion Coefficients in C..:

Balogh, Z. ; Erdélyi, Z. ; Beke, Dezső L....
Defect and Diffusion Forum. 289-292 (2009) - p. 763-767 , 2009

Link: https://doi.org/10.4028/..

11

Dopant Diffusion during Amorphous Silicon Crystallization:

Portavoce, Alain ; Simola, Roberto ; Mangelinck, Dominique..
Defect and Diffusion Forum. 264 (2007) - p. 33-38 , 2007

Link: https://doi.org/10.4028/..

12

Sb Diffusion and Segregation in Amorphous Si Thin Films:

Lanza, G. ; Nyéki, J. ; Girardeaux, Christophe...
Defect and Diffusion Forum. 237-240 (2005) - p. 1246-1251 , 2005

Link: https://doi.org/10.4028/..

13

Grain Boundary Diffusion of Ni in NiTi Shape-Memory Alloy:

Nyéki, J. ; Erdélyi, G. ; Lexcellent, Christian..
Defect and Diffusion Forum. 237-240 (2005) - p. 543-547 , 2005

Link: https://doi.org/10.4028/..

14

A new diffusion mechanism for self-compensating impurities ..:

Gontier–Moya, Eliette-Geneviève ; Moya, Fernand ; Bernardini, Jean
Zeitschrift für Metallkunde. 95 (2004) 10 - p. 888-894 , 2004

Link: https://doi.org/10.3139/..

15

Experimental and Theoretical Study of Type-C Grain Boundary..:

Erdélyi, Z. ; Girardeaux, Christophe ; Bernardini, Jean..
Defect and Diffusion Forum. 194-199 (2001) - p. 1161-1166 , 2001

Link: https://doi.org/10.4028/..