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Beznasyuk, Daria V.
17
results:
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Online (17)
Mediatypes
Articles (Online) (10)
OpenAccess-fulltext (7)
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1
Statistical Reproducibility of Selective Area Grown InAs Na..:
Olsteins, Dags
;
Nagda, Gunjan
;
Carrad, Damon J.
...
Nano Letters. 24 (2024) 22 - p. 6553-6559 , 2024
Link:
https://doi.org/10.1021/..
?
2
Cryogenic multiplexing using selective area grown nanowires:
Olšteins, Dāgs
;
Nagda, Gunjan
;
Carrad, Damon J.
...
Nature Communications. 14 (2023) 1 - p. , 2023
Link:
https://doi.org/10.1038/..
?
3
Atomic-Scale Characterization of Planar Selective-Area-Grow..:
Qu, Jiangtao
;
Beznasyuk, Daria V.
;
Cassidy, Maja
...
ACS Applied Materials & Interfaces. 14 (2022) 42 - p. 47981-47990 , 2022
Link:
https://doi.org/10.1021/..
?
4
Doubling the mobility of InAs/InGaAs selective area grown n..:
Beznasyuk, Daria V.
;
Martí-Sánchez, Sara
;
Kang, Jung-Hyun
...
Physical Review Materials. 6 (2022) 3 - p. , 2022
Link:
https://doi.org/10.1103/..
?
5
Statistical Reproducibility of Selective Area Grown InAs Na..:
Olšteins, Dāgs
;
Nagda, Gunjan
;
Carrad, Damon J
...
http://arxiv.org/abs/2401.05084. , 2024
Link:
http://arxiv.org/abs/240..
?
6
Cryogenic multiplexing using selective area grown nanowires:
Olšteins, Dāgs
;
Nagda, Gunjan
;
Carrad, Damon J
...
https://orbit.dtu.dk/en/publications/4a8be160-4c96-4444-9ef0-b29b07e9305b. , 2023
Link:
https://orbit.dtu.dk/en/..
?
7
Doubling the mobility of InAs/InGaAs selective area grown n..:
Beznasyuk, Daria V
;
Martí-Sánchez, Sara
;
Kang, Jung-Hyun
...
https://orbit.dtu.dk/en/publications/47c9b37b-8df5-4391-8eeb-bd0305dcbdce. , 2022
Link:
https://orbit.dtu.dk/en/..
?
8
Supplemental Material: Doubling the mobility of InAs/InGaAs..:
Beznasyuk, Daria V
;
Martí-Sànchez, Sara
;
Kang, Jung-Hyun
...
#PLACEHOLDER_PARENT_METADATA_VALUE#. , 2022
Link:
http://hdl.handle.net/10..
?
9
Doubling the mobility of InAs/InGaAs selective area grown n..:
Beznasyuk, Daria V
;
Martí-Sànchez, Sara
;
Kang, Jung-Hyun
...
#PLACEHOLDER_PARENT_METADATA_VALUE#. , 2022
Link:
http://hdl.handle.net/10..
?
10
Doubling the mobility of InAs/InGaAs selective area grown n..:
Beznasyuk, Daria V
;
Martí-Sánchez, Sara
;
Kang, Jung-Hyun
...
http://arxiv.org/abs/2103.15971. , 2021
Link:
http://arxiv.org/abs/210..
?
11
Dislocation-free axial InAs-on-GaAs nanowires on silicon:
Beznasyuk, Daria V
;
Robin, Eric
;
Hertog, Martien Den
..
http://arxiv.org/abs/1704.05631. , 2017
Link:
http://arxiv.org/abs/170..
?
12
Selective area growth rates of III-V nanowires:
Cachaza, Martin Espiñeira
;
Christensen, Anna Wulff
;
Beznasyuk, Daria
...
Physical Review Materials. 5 (2021) 9 - p. , 2021
Link:
https://doi.org/10.1103/..
?
13
Effect of in-plane alignment on selective area grown homo-e..:
Nagda, G
;
Beznasyuk, D V
;
Nygård, J
.
Nanotechnology. 34 (2023) 27 - p. 275702 , 2023
Link:
https://doi.org/10.1088/..
?
14
Full characterization and modeling of graded interfaces in ..:
Beznasyuk, D. V.
;
Stepanov, P.
;
Rouvière, J. L.
...
Physical Review Materials. 4 (2020) 7 - p. , 2020
Link:
https://doi.org/10.1103/..
?
15
Effect of an arsenic flux on the molecular-beam epitaxy of ..:
Sibirev, N. V.
;
Bouravleuv, A. D.
;
Trushkov, Yu. M.
...
Semiconductors. 47 (2013) 10 - p. 1416-1421 , 2013
Link:
https://doi.org/10.1134/..
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