E-LIB Suche - Ergebnisse für: Bi, Da-Wei

1

Research on the radiation hardened SOI devices with single-..:

Dai, Li-Hua ; Bi, Da-Wei ; Hu, Zhi-Yuan...
Chinese Physics B. 27 (2018) 4 - p. 048503 , 2018

Link: https://doi.org/10.1088/..

2

Enhanced radiation-induced narrow channel effects in 0.13-$..:

Zhang, Meng-Ying ; Hu, Zhi-Yuan ; Bi, Da-Wei..
Chinese Physics B. 27 (2018) 2 - p. 028501 , 2018

Link: https://doi.org/10.1088/..

3

Influence of characteristics' measurement sequence on total..:

Xie, Xin ; Bi, Da-Wei ; Hu, Zhi-Yuan...
Chinese Physics B. 27 (2018) 12 - p. 128501 , 2018

Link: https://doi.org/10.1088/..

4

Metastable Electron Traps in Modified Silicon-on-Insulator ..:

Dai, Li-Hua ; Bi, Da-Wei ; Zhang, Zheng-Xuan...
Chinese Physics Letters. 35 (2018) 5 - p. 056101 , 2018

Link: https://doi.org/10.1088/..

5

Total ionizing dose induced single transistor latchup in 13..:

Fan, Shuang ; Hu, Zhi-Yuan ; Zhang, Zheng-Xuan...
Chinese Physics B. 26 (2017) 3 - p. 036103 , 2017

Link: https://doi.org/10.1088/..

6

Influence of Tilted Angle on Effective Linear Energy Transf..:

Zhang, Le-Qing ; Lu, Jian ; Xu, Jia-Ling...
Chinese Physics Letters. 34 (2017) 11 - p. 118504 , 2017

Link: https://doi.org/10.1088/..

7

Utilizing a shallow trench isolation parasitic transistor t..:

Peng, Chao ; Hu, Zhi-Yuan ; Ning, Bing-Xu...
Chinese Physics B. 23 (2014) 9 - p. 090702 , 2014

Link: https://doi.org/10.1088/..

8

Enhanced Radiation Sensitivity in Short-Channel Partially D..:

Peng, Chao ; Zhang, Zheng-Xuan ; Hu, Zhi-Yuan...
Chinese Physics Letters. 30 (2013) 9 - p. 098502 , 2013

Link: https://doi.org/10.1088/..

9

The Enhanced Role of Shallow-Trench Isolation in Ionizing R..:

Huang, Hui-Xiang ; Bi, Da-Wei ; Peng, Chao..
Chinese Physics Letters. 30 (2013) 8 - p. 080701 , 2013

Link: https://doi.org/10.1088/..

10

Bias dependence of a deep submicron NMOSFET response to tot..:

Liu, Zhang-Li ; Hu, Zhi-Yuan ; Zhang, Zheng-Xuan...
Chinese Physics B. 20 (2011) 7 - p. 070701 , 2011

Link: https://doi.org/10.1088/..

11

Total ionizing dose effect in an input/output device for fl..:

Liu, Zhang-Li ; Hu, Zhi-Yuan ; Zhang, Zheng-Xuan...
Chinese Physics B. 20 (2011) 12 - p. 120703 , 2011

Link: https://doi.org/10.1088/..

12

Enhanced Total Ionizing Dose Susceptibility in Narrow Chann..:

Liu, Zhang-Li ; Hu, Zhi-Yuan ; Zhang, Zheng-Xuan...
Chinese Physics Letters. 28 (2011) 7 - p. 070701 , 2011

Link: https://doi.org/10.1088/..

13

Radiation induced inter-device leakage degradation:

Hu, Zhi-Yuan ; Liu, Zhang-Li ; Shao, Hua...
Chinese Physics C. 35 (2011) 8 - p. 769-773 , 2011

Link: https://doi.org/10.1088/..

14

Impact of substrate bias on radiation-induced edge effects ..:

Hu, Zhi-Yuan ; Liu, Zhang-Li ; Zhang, Zheng-Xuan...
Chinese Physics B. 20 (2011) 12 - p. 120702 , 2011

Link: https://doi.org/10.1088/..

15

Radiation response of pseudo-MOS transistors fabricated in ..:

Da-Wei, Bi ; Zheng-Xuan, Zhang ; Shuai, Zhang...
Chinese Physics C. 33 (2009) 10 - p. 866-869 , 2009

Link: https://doi.org/10.1088/..