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Biegelsen, D. K.
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1

Open and closed loop manipulation of charged microchiplets ..:

Lu, J. P. ; Thompson, J. D. ; Whiting, G. L....
Applied Physics Letters.  105 (2014)  5 - p. , 2014
Link: https://doi.org/10.1063/..
 
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2

Reflectance Difference Spectroscopy: Experiment and Theory ..:

Kipp, Lutz ; Biegelsen, D. K. ; Northrup, J. E...
Physical Review Letters.  76 (1996)  15 - p. 2810-2813 , 1996
Link: https://doi.org/10.1103/..
 
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3

The use of graded InGaAs layers and patterned substrates to..:

Knall, J. ; Romano, L. T. ; Biegelsen, D. K....
Journal of Applied Physics.  76 (1994)  5 - p. 2697-2702 , 1994
Link: https://doi.org/10.1063/..
 
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4

Misfit dislocations in ZnSe grown on vicinal Si(001) substr..:

Romano, L. T. ; Knall, J. ; Bringans, R. D..
Applied Physics Letters.  65 (1994)  7 - p. 869-871 , 1994
Link: https://doi.org/10.1063/..
 
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5

Self-limiting oxidation for fabricating sub-5 nm silicon na..:

Liu, H. I. ; Biegelsen, D. K. ; Ponce, F. A...
Applied Physics Letters.  64 (1994)  11 - p. 1383-1385 , 1994
Link: https://doi.org/10.1063/..
 
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6

Scanning Tunneling Microscopy Studies of Semiconductor Surf..:

Bringans, R. D. ; Biegelsen, D. K. ; J. E. Northrup, J. E. Northrup.
Japanese Journal of Applied Physics.  32 (1993)  3S - p. 1484 , 1993
Link: https://doi.org/10.1143/..
 
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7

Use of ZnSe as an interlayer for GaAs growth on Si:

Bringans, R. D. ; Biegelsen, D. K. ; Swartz, L.-E...
Applied Physics Letters.  61 (1992)  2 - p. 195-197 , 1992
Link: https://doi.org/10.1063/..
 
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8

Heteroepitaxial growth of polar semiconductors on non-polar..:

Biegelsen, D.K. ; Bringans, R.D. ; Northrup, J.E.
Materials Science and Engineering: B.  14 (1992)  3 - p. 317-331 , 1992
Link: https://doi.org/10.1016/..
 
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9

Misfit dislocations in GaAs heteroepitaxy on (001) Si:

Gerthsen, D. ; Biegelsen, D.K. ; Ponce, F.A..
Journal of Crystal Growth.  106 (1990)  2-3 - p. 157-165 , 1990
Link: https://doi.org/10.1016/..
 
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10

Early stages of growth of GaAs on Si observed by scanning t..:

Biegelsen, D. K. ; Bringans, R. D. ; Northrup, J. E..
Applied Physics Letters.  57 (1990)  23 - p. 2419-2421 , 1990
Link: https://doi.org/10.1063/..
 
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11

Simple ion milling preparation of 〈111〉 tungsten tips:

Biegelsen, D. K. ; Ponce, F. A. ; Tramontana, J. C.
Applied Physics Letters.  54 (1989)  13 - p. 1223-1225 , 1989
Link: https://doi.org/10.1063/..
 
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12

Silicon surface passivation by hydrogen termination: A comp..:

Fenner, D. B. ; Biegelsen, D. K. ; Bringans, R. D.
Journal of Applied Physics.  66 (1989)  1 - p. 419-424 , 1989
Link: https://doi.org/10.1063/..
 
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13

Dangling or floating bonds in amorphous silicon?:

Stutzmann, M. ; Biegelsen, D. K.
Physical Review Letters.  60 (1988)  16 - p. 1682-1682 , 1988
Link: https://doi.org/10.1103/..
 
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14

The effect of a Ga prelayer on the beginning of GaAs epitax..:

Bringans, R. D. ; Olmstead, M. A. ; Ponce, F. A....
Journal of Applied Physics.  64 (1988)  7 - p. 3472-3475 , 1988
Link: https://doi.org/10.1063/..
 
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15

Graded-thickness samples for molecular beam epitaxial growt..:

Biegelsen, D. K. ; Ponce, F. A. ; Krusor, B. S...
Applied Physics Letters.  52 (1988)  21 - p. 1779-1781 , 1988
Link: https://doi.org/10.1063/..
 
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