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Binari, Steven C.
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1

Impact of barrier thickness on transistor performance in Al..:

Deen, David A. ; Storm, David F. ; Meyer, David J....
Applied Physics Letters.  105 (2014)  9 - p. , 2014
Link: https://doi.org/10.1063/..
 
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2

Self-aligned ALD AlOx T-gate insulator for gate leakage cur..:

Meyer, David J. ; Bass, Robert ; Katzer, D. Scott...
Solid-State Electronics.  54 (2010)  10 - p. 1098-1104 , 2010
Link: https://doi.org/10.1016/..
 
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3

GaN FETs for microwave and high-temperature applications:

Binari, Steven C. ; Doverspike, K. ; Kelner, G...
Solid-State Electronics.  41 (1997)  2 - p. 177-180 , 1997
Link: https://doi.org/10.1016/..
 
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4

Electrochemical Patterning of Amorphous Carbon on Diamond:

Marchywka, Mike ; Pehrsson, Pehr E. ; Binari, Steven C..
Journal of The Electrochemical Society.  140 (1993)  2 - p. L19-L22 , 1993
Link: https://doi.org/10.1149/..
 
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5

Improved GaN-based HEMT performance by nanocrystalline diam..:

Anderson, Travis J ; Hobart, Karl D ; Tadjer, Marko Jak...
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6256985.  , 2012
Link: https://oa.upm.es/15755/
 
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6

Ultrathin-barrier AlN/GaN heterostructures grown by rf plas..:

Storm, D.F. ; Deen, D.A. ; Katzer, D.S....
Journal of Crystal Growth.  380 (2013)  - p. 14-17 , 2013
Link: https://doi.org/10.1016/..
 
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7

Electrical characterization of Schottky contacts to N-polar..:

Downey, B.P. ; Meyer, D.J. ; Katzer, D.S...
Solid-State Electronics.  86 (2013)  - p. 17-21 , 2013
Link: https://doi.org/10.1016/..
 
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8

Fully coupled thermoelectromechanical analysis of GaN high ..:

Ancona, M. G. ; Binari, S. C. ; Meyer, D. J.
Journal of Applied Physics.  111 (2012)  7 - p. , 2012
Link: https://doi.org/10.1063/..
 
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9

Oxygen incorporation in homoepitaxial N-polar GaN grown by ..:

Storm, D. F. ; Katzer, D. S. ; Meyer, D. J..
Journal of Applied Physics.  112 (2012)  1 - p. , 2012
Link: https://doi.org/10.1063/..
 
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10

Improved GaN-based HEMT performance by nanocrystalline diam..:

, In: 70th Device Research Conference,
Anderson, T.J. ; Pate, B.B. ; Binari, S.C.... - p. 155-156 , 2012
Link: https://doi.org/10.1109/..
 
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11

HfO2‐insulated gate N‐polar GaN HEMTs with high breakdown v..:

Meyer, D. J. ; Katzer, D. S. ; Deen, D. A....
physica status solidi (a).  208 (2011)  7 - p. 1630-1633 , 2011
Link: https://doi.org/10.1002/..
 
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12

Atomic layer deposited Ta2O5 gate insulation for enhancing ..:

Deen, D. A. ; Storm, D. F. ; Bass, R....
Applied Physics Letters.  98 (2011)  2 - p. , 2011
Link: https://doi.org/10.1063/..
 
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13

Dependence of ohmic contact resistance on barrier thickness..:

Deen, D.A. ; Storm, D.F. ; Katzer, D.S...
Solid-State Electronics.  54 (2010)  6 - p. 613-615 , 2010
Link: https://doi.org/10.1016/..
 
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14

Proximity effects of beryllium-doped GaN buffer layers on t..:

Storm, D.F. ; Katzer, D.S. ; Deen, D.A....
Solid-State Electronics.  54 (2010)  11 - p. 1470-1473 , 2010
Link: https://doi.org/10.1016/..
 
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15

Experimental investigation of microchannel coolers for the ..:

Calame, J.P. ; Myers, R.E. ; Binari, S.C...
International Journal of Heat and Mass Transfer.  50 (2007)  23-24 - p. 4767-4779 , 2007
Link: https://doi.org/10.1016/..
 
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