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Blaho, Michal
27  results:
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1

Growth of N-polar In-rich InAlN by metal organic chemical v..:

Hasenöhrl, Stanislav ; Blaho, Michal ; Dobročka, Edmund...
Materials Science in Semiconductor Processing.  156 (2023)  - p. 107290 , 2023
Link: https://doi.org/10.1016/..
 
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2

Mg Doping of N-Polar, In-Rich InAlN:

Kuzmík, Ján ; Pohorelec, Ondrej ; Hasenöhrl, Stanislav...
Materials.  16 (2023)  6 - p. 2250 , 2023
Link: https://doi.org/10.3390/..
 
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3

GaAs Nanomembranes in the High Electron Mobility Transistor..:

Gregušová, Dagmar ; Dobročka, Edmund ; Eliáš, Peter...
Materials.  14 (2021)  13 - p. 3461 , 2021
Link: https://doi.org/10.3390/..
 
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4

InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconducto..:

Gregušová, Dagmar ; Tóth, Lajos ; Pohorelec, Ondrej...
Japanese Journal of Applied Physics.  58 (2019)  SC - p. SCCD21 , 2019
Link: https://doi.org/10.7567/..
 
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5

Hafnium oxide and tantalum oxide based resistive switching ..:

Fröhlich, Karol ; Kundrata, Ivan ; Blaho, Michal...
Journal of Applied Physics.  124 (2018)  15 - p. , 2018
Link: https://doi.org/10.1063/..
 
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6

Performance of HfOx- and TaOx-based Resistive Switching Str..:

Fröhlich, Karol ; Kundrata, Ivan ; Blaho, Michal...
MRS Advances.  3 (2018)  59 - p. 3427-3432 , 2018
Link: https://doi.org/10.1557/..
 
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7

Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off ..:

Gregušová, Dagmar ; Blaho, Michal ; Haščík, Štefan...
physica status solidi (a).  214 (2017)  11 - p. , 2017
Link: https://doi.org/10.1002/..
 
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8

ZrO2/InAlN/GaN Metal–Oxide–Semiconductor Heterostructure Fi..:

Gregušová, Dagmar ; Hušeková, Kristína ; Stoklas, Roman...
Japanese Journal of Applied Physics.  52 (2013)  8S - p. 08JN07 , 2013
Link: https://doi.org/10.7567/..
 
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9

Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and ..:

Blaho, Michal ; Gregušová, Dagmar ; Jurkovič, Michal...
Microelectronic Engineering.  112 (2013)  - p. 204-207 , 2013
Link: https://doi.org/10.1016/..
 
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10

Reducing the Impact of Uncertainties in Networked Control S..:

Michal, Blaho ; J´n, Murgaš ; Eugen, Viszus.
Journal of Electrical Engineering.  65 (2015)  6 - p. 364-370 , 2015
Link: https://doi.org/10.2478/..
 
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11

Mg Doping of N-Polar, In-Rich InAlN:

Kuzmík, Ján ; Pohorelec, Ondrej ; Hasenöhrl, Stanislav...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056125/.  , 2023
Link: http://www.ncbi.nlm.nih...
 
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12

Performance analysis of monolithically integrated depletion..:

Nagy, Lukáš ; Chvála, Aleš ; Stopjaková, Viera...
2017 International Conference on Applied Electronics: Pilsen, 5th – 6th September 2017, Czech Republic, p.129-132..  , 2017
Link: http://hdl.handle.net/11..
 
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13

Education of Future Advanced Matlab Users:

Blaho, Michal ; Foltin, Martin ; Fodrek, Peter.
ISBN:978-953-51-0752-1.  , 2012
Link: https://mts.intechopen.c..
 
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14

Mg Doping of N-Polar, In-Rich InAlN:

Ján Kuzmík ; Ondrej Pohorelec ; Stanislav Hasenöhrl...
https://www.mdpi.com/1996-1944/16/6/2250.  , 2023
Link: https://doi.org/10.3390/..
 
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15

Mg Doping of N-Polar, In-Rich InAlN:

Ján Kuzmík ; Ondrej Pohorelec ; Stanislav Hasenöhrl...
Optics and Photonics.  , 2023
Link: https://doi.org/10.3390/..
 
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