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Bockowski, M.
~ 200  results:
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1

Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk G..:

Damilano, B. ; Aristégui, R. ; Teisseyre, H....
Journal of Applied Physics.  135 (2024)  9 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

Role of carbon in n-type bulk GaN crystals:

Amilusik, M. ; Zajac, M. ; Fijalkowski, M....
Journal of Crystal Growth.  632 (2024)  - p. 127641 , 2024
Link: https://doi.org/10.1016/..
 
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3

Dissolution of Mg-enriched defects in implanted GaN and inc..:

Huynh, K. ; Wang, Y. ; Liao, M. E....
Journal of Applied Physics.  135 (2024)  2 - p. , 2024
Link: https://doi.org/10.1063/..
 
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4

Ultra-high pressure annealing of Mn-implanted HVPE-GaN:

Jaroszynski, P. ; Sierakowski, K. ; Jakiela, R....
Journal of Alloys and Compounds.  966 (2023)  - p. 171612 , 2023
Link: https://doi.org/10.1016/..
 
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5

Europium diffusion in ammonothermal gallium nitride:

Jaroszynski, P. ; Grzanka, E. ; Grabowski, M....
Applied Surface Science.  625 (2023)  - p. 157188 , 2023
Link: https://doi.org/10.1016/..
 
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6

Electrical transport properties of highly doped N-type GaN ..:

Konczewicz, L ; Litwin-Staszewska, E ; Zajac, M...
Semiconductor Science and Technology.  37 (2022)  5 - p. 055012 , 2022
Link: https://doi.org/10.1088/..
 
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7

Thermal annealing of GaN implanted with Be:

Reshchikov, M. A. ; Andrieiev, O. ; Vorobiov, M....
Journal of Applied Physics.  131 (2022)  12 - p. , 2022
Link: https://doi.org/10.1063/..
 
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8

The effect of annealing on photoluminescence from defects i..:

Reshchikov, M. A. ; Demchenko, D. O. ; Ye, D....
Journal of Applied Physics.  131 (2022)  3 - p. , 2022
Link: https://doi.org/10.1063/..
 
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9

Defect-related photoluminescence from ammono GaN:

Reshchikov, M. A. ; Vorobiov, M. ; Grabianska, K....
Journal of Applied Physics.  129 (2021)  9 - p. , 2021
Link: https://doi.org/10.1063/..
 
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10

Self-compensation of carbon in HVPE-GaN:C:

Piotrzkowski, R. ; Zajac, M. ; Litwin-Staszewska, E..
Applied Physics Letters.  117 (2020)  1 - p. , 2020
Link: https://doi.org/10.1063/..
 
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11

Complex Geometric Structure of a Simple Solid-Liquid Interf..:

de Jong, A. E. F. ; Vonk, V. ; Boćkowski, M....
Physical Review Letters.  124 (2020)  8 - p. , 2020
Link: https://doi.org/10.1103/..
 
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12

Acceptor state anchoring in gallium nitride:

Cameron, D. ; O'Donnell, K. P. ; Edwards, P. R....
Applied Physics Letters.  116 (2020)  10 - p. , 2020
Link: https://doi.org/10.1063/..
 
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13

Growth of bulk GaN crystals:

Kucharski, R. ; Sochacki, T. ; Lucznik, B..
Journal of Applied Physics.  128 (2020)  5 - p. , 2020
Link: https://doi.org/10.1063/..
 
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14

Recent progress in basic ammonothermal GaN crystal growth:

Grabianska, K. ; Kucharski, R. ; Puchalski, A...
Journal of Crystal Growth.  547 (2020)  - p. 125804 , 2020
Link: https://doi.org/10.1016/..
 
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15

Electrical properties of vertical GaN Schottky diodes on Am..:

Kruszewski, P. ; Prystawko, P. ; Grabowski, M....
Materials Science in Semiconductor Processing.  96 (2019)  - p. 132-136 , 2019
Link: https://doi.org/10.1016/..
 
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