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Bollaert, S.
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1

A multiline InP-TRL kit for sub-mmWave characterization of ..:

, In: 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz),
Younes, R. ; Wichmann, N. ; Lepilliet, S... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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2

fmax=800 GHz with 75 nm gate length and asymmetric gate rec..:

, In: 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz),
Samnouni ; Wichmann, N. ; Wallart, X.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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3

1.2 THz maximum frequency of oscillation achieved by using ..:

, In: 2019 Compound Semiconductor Week (CSW),
Samnouni, M. ; Wichmann, N. ; Wallart, X.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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4

III-V MOSFET Structure (InP/InAs/InGaAs) I-V Characteristic..:

, In: Lecture Notes in Electrical Engineering; Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy,
Ammi, S. ; Aissat, A. ; Wichmann, N.. - p. 207-215 , 2018
Link: https://doi.org/10.1007/..
 
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5

Impact ionization and band-to-band tunneling in InxGa1-xAs ..:

Vasallo, B. G. ; González, T. ; Talbo, V....
Journal of Applied Physics.  123 (2018)  3 - p. , 2018
Link: https://doi.org/10.1063/..
 
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6

Static and low frequency noise characterization of ultra-th..:

Karatsori, T.A. ; Pastorek, M. ; Theodorou, C.G....
Solid-State Electronics.  143 (2018)  - p. 56-61 , 2018
Link: https://doi.org/10.1016/..
 
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7

Study of the oxidation at the Al2O3/GaSb interface after NH..:

Lechaux, Y. ; Fadjie-Djomkam, A. B. ; Pastorek, M....
Journal of Applied Physics.  124 (2018)  17 - p. , 2018
Link: https://doi.org/10.1063/..
 
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8

Improvement of interfacial properties of Al2O3/GaSb using O..:

, In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC),
Lechaux, Y. ; Fadjie-Djomkam, A-B. ; Bollaert, S... - p. 1-2 , 2016
Link: https://doi.org/10.1109/..
 
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9

Impact of oxygen plasma postoxidation process on Al2O3/n-In..:

Lechaux, Y. ; Fadjie-Djomkam, A. B. ; Bollaert, S..
Applied Physics Letters.  109 (2016)  13 - p. , 2016
Link: https://doi.org/10.1063/..
 
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10

Improvement of interfacial and electrical properties of Al2..:

Lechaux, Y ; Fadjie, A ; Bollaert, S...
Journal of Physics: Conference Series.  647 (2015)  - p. 012062 , 2015
Link: https://doi.org/10.1088/..
 
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11

Monte Carlo model for the analysis and development of III-V..:

Talbo, V ; Mateos, J ; González, T...
Journal of Physics: Conference Series.  647 (2015)  - p. 012056 , 2015
Link: https://doi.org/10.1088/..
 
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12

Threshold voltage study of scaled self‐aligned In0.53Ga0.47..:

Dehzangi, A. ; Razip Wee, M.F. Mohd ; Wichmann, N....
Micro & Nano Letters.  9 (2014)  3 - p. 180-183 , 2014
Link: https://doi.org/10.1049/..
 
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13

Interfacial X‐ray photospectrometry study of In0.53Ga0.47As..:

Mohd Razip Wee, M.F. ; Dehzangi, A. ; Wichmann, N...
Micro & Nano Letters.  8 (2013)  11 - p. 836-840 , 2013
Link: https://doi.org/10.1049/..
 
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14

Electrical characterization of In0.53Ga0.47As/In0.52Al0.48A..:

Shi, J. ; Wichmann, N. ; Roelens, Y..
Applied Physics Letters.  102 (2013)  24 - p. , 2013
Link: https://doi.org/10.1063/..
 
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15

Terahertz emission induced by optical beating in nanometer-..:

Nouvel, P. ; Torres, J. ; Blin, S....
Journal of Applied Physics.  111 (2012)  10 - p. , 2012
Link: https://doi.org/10.1063/..
 
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