E-LIB Suche - Ergebnisse für: Bolotnikov, Alexander

1

Advanced SiC Power Technology and Package:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Kim, ByongJin ; Bolotnikov, Alexander ; Jeong, Helen... - p. 1-3 , 2023

Link: https://doi.org/10.1109/..

2

A Subcircuit SPICE Model for SiC Charge-Balance Schottky Di..:

Hitchcock, Collin W. ; Zhou, Xiang ; Pandey, Gyanesh...
Materials Science Forum. 1004 (2020) - p. 945-952 , 2020

Link: https://doi.org/10.4028/..

3

4.5kV SiC Charge-Balanced MOSFETs with Ultra-Low On-Resista..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Ghandi, Reza ; Bolotnikov, Alexander ; Kennerly, Stacey... - p. 126-129 , 2020

Link: https://doi.org/10.1109/..

4

Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Ba..:

Zhou, Xiang ; Hitchcock, Collin W. ; Ghandi, Reza..
Materials Science Forum. 1004 (2020) - p. 939-944 , 2020

Link: https://doi.org/10.4028/..

5

SiC Charge-Balanced Devices Offering Breakthrough Performan..:

Bolotnikov, Alexander ; Losee, Peter A. ; Ghandi, Reza...
Materials Science Forum. 963 (2019) - p. 655-659 , 2019

Link: https://doi.org/10.4028/..

6

Optimization of 1700V SiC MOSFET for Short Circuit Ruggedne..:

Bolotnikov, Alexander ; Losee, Peter A. ; Ghandi, Reza..
Materials Science Forum. 963 (2019) - p. 801-804 , 2019

Link: https://doi.org/10.4028/..

7

Deep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Sc..:

Zhou, Xiang ; Pandey, Gyanesh ; Ghandi, Reza...
Materials Science Forum. 963 (2019) - p. 516-519 , 2019

Link: https://doi.org/10.4028/..

8

3kV SiC Charge-Balanced Diodes Breaking Unipolar Limit:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Ghandi, Reza ; Bolotnikov, Alexander ; Lilienfeld, David.. - p. 179-182 , 2019

Link: https://doi.org/10.1109/..

9

Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Imp..:

Ghandi, Reza ; Losee, Peter ; Bolotnikov, Alexander.
Materials Science Forum. 924 (2018) - p. 573-576 , 2018

Link: https://doi.org/10.4028/..

10

Readiness of SiC MOSFETs for Aerospace and Industrial Appli..:

Stevanovic, Ljubisa ; Losee, Peter A. ; Kennerly, Stacey...
Materials Science Forum. 858 (2016) - p. 894-899 , 2016

Link: https://doi.org/10.4028/..

11

High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent ..:

Losee, Peter A. ; Bolotnikov, Alexander ; Kennerly, Stacey...
Materials Science Forum. 858 (2016) - p. 876-879 , 2016

Link: https://doi.org/10.4028/..

12

Design of Area-Efficient, Robust and Reliable Junction Term..:

Bolotnikov, Alexander ; Losee, Peter A. ; Deeb, Peter...
Materials Science Forum. 858 (2016) - p. 737-740 , 2016

Link: https://doi.org/10.4028/..

13

Utilization of SiC MOSFET Body Diode in Hard Switching Appl..:

Bolotnikov, Alexander ; Glaser, John ; Nasadoski, Jeff...
Materials Science Forum. 778-780 (2014) - p. 947-950 , 2014

Link: https://doi.org/10.4028/..

14

Design, Yield and Process Capability Study of 8 kV 4H-SiC P..:

Bolotnikov, Alexander ; Losee, Peter A. ; Matocha, Kevin...
Materials Science Forum. 717-720 (2012) - p. 953-956 , 2012

Link: https://doi.org/10.4028/..

15

Free carrier distribution profiling of 4H-SiC substrates us..:

Caldwell, Joshua D. ; Glembocki, Orest J. ; Prokes, Sharka M....
Journal of Applied Physics. 101 (2007) 9 - p. , 2007

Link: https://doi.org/10.1063/..