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Bonar, J.M.
~ 600
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english (448)
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1
WCN23-0253 CHARACTERISTICS OF MAINTENANCE HEMODIALYSIS PATI..:
JAUWERISSA, R.
;
Bonar, M.
;
Nugroho, P.
.
Kidney International Reports. 8 (2023) 3 - p. S285-S286 , 2023
Link:
https://doi.org/10.1016/..
?
2
Observation of a p < 10–9 life-history event: implications ..:
Bonar, M.
;
Laforge, M.P.
;
Vander Wal, E.
Canadian Journal of Zoology. 95 (2017) 2 - p. 133-137 , 2017
Link:
https://doi.org/10.1139/..
?
3
Systematic review of the development, implementation and av..:
Gray, L. J.
;
Leigh, T.
;
Davies, M. J.
...
Diabetic Medicine. 30 (2013) 6 - p. 758-760 , 2013
Link:
https://doi.org/10.1111/..
?
4
Suppression of boron diffusion due to carbon during rapid t..:
Karunaratne, M. S. A.
;
Bonar, J. M.
;
Ashburn, P.
.
Journal of Materials Science. 41 (2006) 3 - p. 1013-1016 , 2006
Link:
https://doi.org/10.1007/..
?
5
Effect of fluorine on boron diffusion under interstitial in..:
Kham, M.N.
;
El Mubarek, H.A.W.
;
Bonar, J.M.
..
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 253 (2006) 1-2 - p. 100-104 , 2006
Link:
https://doi.org/10.1016/..
?
6
Suppression of boron transient enhanced diffusion in silico..:
El Mubarek, H.A.W.
;
Wang, Y.
;
Price, R.
...
Materials Science in Semiconductor Processing. 8 (2005) 1-3 - p. 103-109 , 2005
Link:
https://doi.org/10.1016/..
?
7
Effect of fluorine on boron thermal diffusion in the presen..:
Kham, M.N.
;
El Mubarek, H.A.W.
;
Bonar, J.M.
.
Materials Science and Engineering: B. 124-125 (2005) - p. 192-195 , 2005
Link:
https://doi.org/10.1016/..
?
8
Effect of point defect injection on diffusion of boron in s..:
Karunaratne, M. S. A.
;
Willoughby, A. F. W.
;
Bonar, J. M.
..
Journal of Applied Physics. 97 (2005) 11 - p. , 2005
Link:
https://doi.org/10.1063/..
?
9
Study of fluorine behavior in silicon by selective point de..:
Kham, M. N.
;
El Mubarek, H. A. W.
;
Bonar, J. M.
.
Applied Physics Letters. 87 (2005) 1 - p. , 2005
Link:
https://doi.org/10.1063/..
?
10
Arsenic diffusion in Si and strained SixGe1−x alloys at 100..:
Uppal, Suresh
;
Bonar, J.M.
;
Zhang, Jing
.
Materials Science and Engineering: B. 114-115 (2004) - p. 349-351 , 2004
Link:
https://doi.org/10.1016/..
?
11
Effect of fluorine implantation dose on boron thermal diffu..:
El Mubarek, H. A. W.
;
Bonar, J. M
;
Dilliway, G. D.
...
Journal of Applied Physics. 96 (2004) 8 - p. 4114-4121 , 2004
Link:
https://doi.org/10.1063/..
?
12
Comparison of arsenic diffusion in Si1−xGex formed by epita..:
Mitchell, M. J.
;
Ashburn, P.
;
Bonar, J. M.
.
Journal of Applied Physics. 93 (2003) 8 - p. 4526-4528 , 2003
Link:
https://doi.org/10.1063/..
?
13
Low-pressure chemical vapour deposition growth of epitaxial..:
Lloyd, N.S
;
Bonar, J.M
Materials Science and Engineering: B. 89 (2002) 1-3 - p. 310-313 , 2002
Link:
https://doi.org/10.1016/..
?
14
Characterisation of emitter/base leakage currents in SiGe H..:
Lamb, A.C
;
Schiz, J.F.W
;
Bonar, J.M
...
Microelectronics Reliability. 41 (2001) 2 - p. 273-279 , 2001
Link:
https://doi.org/10.1016/..
?
15
On the use of total reflection x-ray topography for the obs..:
McNally, Patrick J.
;
Dilliway, G.
;
Bonar, J. M.
...
Applied Physics Letters. 77 (2000) 11 - p. 1644-1646 , 2000
Link:
https://doi.org/10.1063/..
1-15