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Bondokov, Robert T
14
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Search for persons
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Online (14)
Mediatypes
Articles (Online) (13)
Bookchapter (Online) (1)
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1
Growth of bulk AlN crystals:
, In:
Reference Module in Materials Science and Materials Engineering
,
Bondokov, Robert T.
;
Mark, Justin
;
Hogan, Kasey
.. , 2023
Link:
https://doi.org/10.1016/..
?
2
(Invited) Development of 3-inch AlN Single Crystal Substrat..:
Bondokov, Robert T
;
Hogan, Kasey
;
Norbury, Griffin Q.
...
ECS Transactions. 109 (2022) 8 - p. 13-19 , 2022
Link:
https://doi.org/10.1149/..
?
3
Two-Inch Aluminum Nitride (AIN) Single Crystal Growth for C..:
Bondokov, Robert T
;
Branagan, Sean P.
;
Ishigami, Naoki
...
ECS Transactions. 104 (2021) 7 - p. 37-48 , 2021
Link:
https://doi.org/10.1149/..
?
4
The progress of AlN bulk growth and epitaxy for electronic ..:
Mueller, Stephan G.
;
Bondokov, Robert T.
;
Morgan, Kenneth E.
...
physica status solidi (a). 206 (2009) 6 - p. 1153-1159 , 2009
Link:
https://doi.org/10.1002/..
?
5
Large-area AlN substrates for electronic applications: An i..:
Bondokov, Robert T.
;
Mueller, Stephan G.
;
Morgan, Kenneth E.
...
Journal of Crystal Growth. 310 (2008) 17 - p. 4020-4026 , 2008
Link:
https://doi.org/10.1016/..
?
6
Structural and surface characterization of large diameter, ..:
Schujman, Sandra B.
;
Schowalter, Leo J.
;
Bondokov, Robert T.
...
Journal of Crystal Growth. 310 (2008) 5 - p. 887-890 , 2008
Link:
https://doi.org/10.1016/..
?
7
A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT:
Tupitsyn, Eugene Y.
;
Arjunan, Arul
;
Bondokov, Robert T.
..
Materials Science Forum. 483-485 (2005) - p. 21-24 , 2005
Link:
https://doi.org/10.4028/..
?
8
Modification of 6H-SiC Surface Defect Structure during Hydr..:
Bondokov, Robert T.
;
Tipirneni, Naveen
;
Cherednichenko, Dimitri I.
.
Materials Science Forum. 457-460 (2004) - p. 431-436 , 2004
Link:
https://doi.org/10.4028/..
?
9
Influence of Structural Defects on the Polishing of Silicon..:
Bondokov, Robert T.
;
Lashkov, Tsanko
;
Sudarshan, Tangali S.
Japanese Journal of Applied Physics. 43 (2004) 1 - p. 43-49 , 2004
Link:
https://doi.org/10.1143/..
?
10
A Method for Defect Delineation in Silicon Carbide Using Po..:
Bondokov, Robert T.
;
Khlebnikov, Igor I.
;
Lashkov, Tsanko
...
Japanese Journal of Applied Physics. 41 (2002) Part 1, No. 12 - p. 7312-7316 , 2002
Link:
https://doi.org/10.1143/..
?
11
Electron paramagnetic resonance of Er3+ ions in aluminum ni..:
Yang, Shan
;
Evans, S. M.
;
Halliburton, L. E.
...
Journal of Applied Physics. 105 (2009) 2 - p. , 2009
Link:
https://doi.org/10.1063/..
?
12
Growth of polycrystalline GeTe films on Pb1 – xSnxTe (x = 0..:
Shtanov, Vladimir I.
;
Shatalova, Tatiana B.
;
Yashina, Lada V.
..
Mendeleev Communications. 14 (2004) 4 - p. 136-137 , 2004
Link:
https://doi.org/10.1070/..
?
13
Micro/nanoscale mechanical and tribological characterizatio..:
Li, Xiaodong
;
Wang, Xinnan
;
Bondokov, Robert
...
Journal of Biomedical Materials Research Part B: Applied Biomaterials. 72B (2004) 2 - p. 353-361 , 2004
Link:
https://doi.org/10.1002/..
?
14
The In/PbTe barrier structures with a thin intermediate ins..:
Aleksandrova, O. A.
;
Akhmedzhanov, A. T.
;
Bondokov, R. Ts.
...
Semiconductors. 34 (2000) 12 - p. 1365-1369 , 2000
Link:
https://doi.org/10.1134/..
1-14