Bongiorno C
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2

Advanced approach of bulk (111) 3C-SiC epitaxial growth:

Calabretta, C. ; Scuderi, V. ; Bongiorno, C....
Microelectronic Engineering.  283 (2024)  - p. 112116 , 2024
 
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3

Assessing innovative bulk (111) 3C-SiC epitaxial growth:

, In: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE),
Calabretta, C. ; Scuderi, V. ; Bongiorno, C.... - p. 1-5 , 2024
 
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Filtering time-dependent covariance matrices using time-ind..:

Bongiorno, C ; Challet, D ; Loeper, G
Journal of Statistical Mechanics: Theory and Experiment.  2023 (2023)  2 - p. 023402 , 2023
 
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Consideration on the extrapolation of the low insulator fie..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
 
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6

Barrier height tuning in Ti/4H-SiC Schottky diodes:

Bellocchi, G. ; Vivona, M. ; Bongiorno, C....
Solid-State Electronics.  186 (2021)  - p. 108042 , 2021
 
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8

Thermal annealing effect on electrical and structural prope..:

Greco, G ; Di Franco, S ; Bongiorno, C...
Semiconductor Science and Technology.  35 (2020)  10 - p. 105004 , 2020
 
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11

Ohmic contacts on n-type and p-type cubic silicon carbide (..:

Spera, M. ; Greco, G. ; Lo Nigro, R....
Materials Science in Semiconductor Processing.  93 (2019)  - p. 295-298 , 2019
 
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13

Morphological and electrical properties of Nickel based Ohm..:

Rascunà, S. ; Badalà, P. ; Tringali, C....
Materials Science in Semiconductor Processing.  97 (2019)  - p. 62-66 , 2019
 
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15

β-Bi2O3 reduction by laser irradiation in a liquid environm..:

D'Angelo, D. ; Filice, S. ; Miritello, M....
Physical Chemistry Chemical Physics.  20 (2018)  15 - p. 10292-10301 , 2018
 
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