Borghs, G.
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1

Impact of Plasma-Induced Surface Damage on the Photoelectro..:

Tseng, Wei-Jhih ; van Dorp, D. H. ; Lieten, R. R....
The Journal of Physical Chemistry C.  118 (2014)  21 - p. 11261-11266 , 2014
 
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2

Anodic Etching of n-GaN Epilayer into Porous GaN and Its Ph..:

Tseng, W. J. ; van Dorp, D. H. ; Lieten, R. R...
The Journal of Physical Chemistry C.  118 (2014)  51 - p. 29492-29498 , 2014
 
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8

Formation of V-grooves on the (Al,Ga)N surface as means of ..:

Cheng, Kai ; Leys, M. ; Degroote, S....
Journal of Crystal Growth.  353 (2012)  1 - p. 88-94 , 2012
 
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9

Strain relaxation in GaN nanopillars:

Tseng, W. J. ; Gonzalez, M. ; Dillemans, L....
Applied Physics Letters.  101 (2012)  25 - p. , 2012
 
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10

AlN/GaN heterostructures grown by metal organic vapor phase..:

Cheng, Kai ; Degroote, S. ; Leys, M....
Journal of Crystal Growth.  315 (2011)  1 - p. 204-207 , 2011
 
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12

GaN-based HEMTs tested under high temperature storage test:

Marcon, D. ; Kang, X. ; Viaene, J....
Microelectronics Reliability.  51 (2011)  9-11 - p. 1717-1720 , 2011
 
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13

Mg doping of GaN by molecular beam epitaxy:

Lieten, R R ; Motsnyi, V ; Zhang, L...
Journal of Physics D: Applied Physics.  44 (2011)  13 - p. 135406 , 2011
 
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15

A deep-level analysis of Ni–Au/AlN/(1 1 1) p+-Si metal–insu..:

Simoen, E ; Visalli, D ; Van Hove, M..
Journal of Physics D: Applied Physics.  44 (2011)  47 - p. 475104 , 2011
 
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