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Bouaziz, Jordan
140
results:
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Format
Online (140)
Mediatypes
Articles (Online) (14)
OpenAccess-fulltext (126)
Languages
english (128)
french (6)
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?
1
Advanced Epitaxial Lift‐Off and Transfer Procedure for the ..:
Bouaziz, Jordan
;
Cancellieri, Claudia
;
Rheingans, Bastian
..
Advanced Materials Interfaces. 10 (2023) 2 - p. , 2023
Link:
https://doi.org/10.1002/..
?
2
Advanced Epitaxial Lift‐Off and Transfer Procedure for the ..:
Bouaziz, Jordan
;
Cancellieri, Claudia
;
Rheingans, Bastian
..
Advanced Materials Interfaces. 10 (2022) 2 - p. , 2022
Link:
https://doi.org/10.1002/..
?
3
Huge Reduction of the Wake-Up Effect in Ferroelectric HZO T..:
Bouaziz, Jordan
;
Romeo, Pedro Rojo
;
Baboux, Nicolas
.
ACS Applied Electronic Materials. 1 (2019) 9 - p. 1740-1745 , 2019
Link:
https://doi.org/10.1021/..
?
4
Imprint issue during retention tests for HfO2 -based FRAM: ..:
Bouaziz, Jordan
;
Rojo Romeo, Pedro
;
Baboux, N
.
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0035687. , 2021
Link:
https://hal.science/hal-..
?
5
Reduction of HfZrO2 capacitor wake-up effect:
Bouaziz, Jordan
;
Baboux, Nicolas
;
Rojo Romeo, Pedro
.
info:eu-repo/grantAgreement//780302/EU/Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2/3eFERRO. , 2021
Link:
https://hal.science/hal-..
?
6
Reduction of HfZrO2 capacitor wake-up effect:
Bouaziz, Jordan
;
Baboux, Nicolas
;
Rojo Romeo, Pedro
.
info:eu-repo/grantAgreement//780302/EU/Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2/3eFERRO. , 2021
Link:
https://hal.science/hal-..
?
7
Reduction of HfZrO2 capacitor wake-up effect:
Bouaziz, Jordan
;
Baboux, Nicolas
;
Rojo Romeo, Pedro
.
info:eu-repo/grantAgreement//780302/EU/Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2/3eFERRO. , 2021
Link:
https://hal.science/hal-..
?
8
Impact of the channel length on molybdenum disulfide field ..:
Sun, Yanxiao
;
Niu, Gang
;
Ren, Wei
...
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0055574. , 2021
Link:
https://hal.science/hal-..
?
9
Imprint issue during retention tests for HfO2 -based FRAM: ..:
Bouaziz, Jordan
;
Rojo Romeo, Pedro
;
Baboux, N
.
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0035687. , 2021
Link:
https://hal.science/hal-..
?
10
Impact of the channel length on molybdenum disulfide field ..:
Sun, Yanxiao
;
Niu, Gang
;
Ren, Wei
...
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0055574. , 2021
Link:
https://hal.archives-ouv..
?
11
Reduction of HfZrO2 capacitor wake-up effect:
Bouaziz, Jordan
;
Baboux, Nicolas
;
Rojo Romeo, Pedro
.
info:eu-repo/grantAgreement//780302/EU/Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2/3eFERRO. , 2021
Link:
https://hal.science/hal-..
?
12
Imprint issue during retention tests for HfO2 -based FRAM: ..:
Bouaziz, Jordan
;
Rojo Romeo, P
;
BABOUX, N
.
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0035687. , 2021
Link:
https://hal.archives-ouv..
?
13
Imprint issue during retention tests for HfO2 -based FRAM: ..:
Bouaziz, Jordan
;
Rojo Romeo, Pedro
;
Baboux, N
.
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0035687. , 2021
Link:
https://hal.science/hal-..
?
14
Imprint issue during retention tests for HfO2 -based FRAM: ..:
Bouaziz, Jordan
;
Rojo Romeo, Pedro
;
Baboux, N
.
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0035687. , 2021
Link:
https://hal.science/hal-..
?
15
Impact of the channel length on molybdenum disulfide field ..:
Sun, Yanxiao
;
Niu, Gang
;
Ren, Wei
...
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0055574. , 2021
Link:
https://hal.science/hal-..
1-15