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Bremond, G.
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1

Access to residual carrier concentration in ZnO nanowires b..:

Wang, L. ; Chauveau, J. M. ; Brenier, R....
Applied Physics Letters.  108 (2016)  13 - p. , 2016
Link: https://doi.org/10.1063/..
 
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2

Nanoscale calibration of n-type ZnO staircase structures by..:

Wang, L. ; Laurent, J. ; Chauveau, J. M....
Applied Physics Letters.  107 (2015)  19 - p. , 2015
Link: https://doi.org/10.1063/..
 
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3

Carrier trapping study on a Ge nanocrystal by two-pass lift..:

Lin (林振), Z ; Brunkov, P ; Bassani, F...
Materials Research Express.  2 (2015)  3 - p. 035001 , 2015
Link: https://doi.org/10.1088/..
 
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4

Temperature dependence of the indirect bandgap in ultrathin..:

Munguía, J. ; Bluet, J.-M. ; Marty, O....
Applied Physics Letters.  100 (2012)  10 - p. , 2012
Link: https://doi.org/10.1063/..
 
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5

Charge photo-carrier transport from silicon nanocrystals em..:

Dridi Rezgui, B. ; Gourbilleau, F. ; Maestre, D....
Journal of Applied Physics.  112 (2012)  2 - p. , 2012
Link: https://doi.org/10.1063/..
 
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6

Electrical properties of self-assembled InAs/InAlAs quantum..:

Hamdaoui, N ; Ajjel, R ; Maaref, H...
Semiconductor Science and Technology.  25 (2010)  6 - p. 065011 , 2010
Link: https://doi.org/10.1088/..
 
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7

Strain dependence of the direct energy bandgap in thin sili..:

Munguía, J ; Bluet, J-M ; Chouaib, H...
Journal of Physics D: Applied Physics.  43 (2010)  25 - p. 255401 , 2010
Link: https://doi.org/10.1088/..
 
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8

Electrical study of trapped charges in nanoscale Ge islands..:

Lin, Z. ; Brunkov, P. ; Bassani, F..
Applied Physics Letters.  97 (2010)  26 - p. , 2010
Link: https://doi.org/10.1063/..
 
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9

Effect of total pressure on the formation and size evolutio..:

Rezgui, B. ; Sibai, A. ; Nychyporuk, T....
Applied Physics Letters.  96 (2010)  18 - p. , 2010
Link: https://doi.org/10.1063/..
 
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10

Deep levels investigation of AlGaN/GaN heterostructure tran..:

Chikhaoui, W. ; Bluet, J.M. ; Girard, P....
Physica B: Condensed Matter.  404 (2009)  23-24 - p. 4877-4879 , 2009
Link: https://doi.org/10.1016/..
 
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11

Silicon nanostructures for solar cell applications:

Gourbilleau, F. ; Dufour, C. ; Rezgui, B..
Materials Science and Engineering: B.  159-160 (2009)  - p. 70-73 , 2009
Link: https://doi.org/10.1016/..
 
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12

Strain dependence of indirect band gap for strained silicon..:

Munguía, J. ; Bremond, G. ; Bluet, J. M...
Applied Physics Letters.  93 (2008)  10 - p. , 2008
Link: https://doi.org/10.1063/..
 
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13

Thickness dependence of photoluminescence for tensely strai..:

Munguía, J. ; Bluet, J-M. ; Baira, M....
Applied Physics Letters.  93 (2008)  19 - p. , 2008
Link: https://doi.org/10.1063/..
 
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14

Capacitance–voltage analysis of InAs quantum dots grown on ..:

Saad, O. ; Baira, M. ; Ajjel, R....
Microelectronics Journal.  39 (2008)  1 - p. 7-11 , 2008
Link: https://doi.org/10.1016/..
 
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15

Morphology and optical properties of p-type porous GaAs(100..:

Ben Khalifa, S. ; Gruzza, B. ; Robert-Goumet, C....
Journal of Luminescence.  128 (2008)  10 - p. 1611-1616 , 2008
Link: https://doi.org/10.1016/..
 
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