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2022 International Electron Devices Meeting (IEDM) ,
1
Gate length scaling beyond Si: Mono-layer 2D Channel FETs R..:
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
2
300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scalin:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
3
FeRAM using Anti-ferroelectric Capacitors for High-speed an..:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
4
Advancing 2D Monolayer CMOS Through Contact, Channel and In..:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
5
Opportunities in 3-D stacked CMOS transistors:
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2020 IEEE Symposium on VLSI Technology ,
6
GaN and Si Transistors on 300mm Si(111) enabled by 3D Monol..:
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2019 IEEE International Electron Devices Meeting (IEDM) ,
7