E-LIB Suche - Ergebnisse für: Bryskiewicz, T.

1

Cellular structure in LEC ternary Ga1 − xInxAs crystals:

Reid, D. ; Lent, B. ; Bryskiewicz, T....
Journal of Crystal Growth. 174 (1997) 1-4 - p. 250-255 , 1997

Link: https://doi.org/10.1016/..

2

In quest of unrestricted growth of bulk crystals by liquid ..:

Bryskiewicz, T.
Journal of Crystal Growth. 153 (1995) 1-2 - p. 19-24 , 1995

Link: https://doi.org/10.1016/..

3

Internal strain and dislocations in Ga1−xAs crystals grown ..:

Bryskiewicz, B. ; Bryskiewicz, T. ; Jiran, E.
Journal of Electronic Materials. 24 (1995) 3 - p. 203-209 , 1995

Link: https://doi.org/10.1007/..

4

Dislocation filtering in SiGe and InGaAs buffer layers grow..:

Bryskiewicz, T.
Applied Physics Letters. 66 (1995) 10 - p. 1237-1239 , 1995

Link: https://doi.org/10.1063/..

5

Transmission electron microscopy characterization of InxGa1..:

McCaffrey, J. P. ; Bryskiewicz, B. ; Bryskiewicz, T..
Applied Physics Letters. 64 (1994) 18 - p. 2344-2346 , 1994

Link: https://doi.org/10.1063/..

6

Growth of alloy substrates by liquid phase electroepitaxy; ..:

Bryskiewicz, T. ; Laferrière, A.
Journal of Crystal Growth. 129 (1993) 3-4 - p. 429-442 , 1993

Link: https://doi.org/10.1016/..

7

Properties of InGaAs epitaxial layers lattice matched to In..:

Roth, A.P. ; Wasilewski, Z. ; Sun, Q....
Journal of Crystal Growth. 113 (1991) 3-4 - p. 379-384 , 1991

Link: https://doi.org/10.1016/..

8

Properties of very uniform InxGa1−xAs single crystals grown..:

Bryskiewicz, T. ; Edelman, P. ; Wasilewski, Z...
Journal of Applied Physics. 68 (1990) 6 - p. 3018-3020 , 1990

Link: https://doi.org/10.1063/..

9

Erratum: ''Electronic and optical properties of Ti-doped Ga..:

Brandt, C. D. ; Hennel, A. M. ; Bryskiewicz, T....
Journal of Applied Physics. 66 (1989) 6 - p. 2768-2768 , 1989

Link: https://doi.org/10.1063/..

10

Electronic and optical properties of Ti-doped GaAs and InP;..:

Brandt, C. D. ; Hennel, A. M. ; Bryskiewicz, T....
Journal of Applied Physics. 65 (1989) 9 - p. 3459-3469 , 1989

Link: https://doi.org/10.1063/..

11

Growth and characterization of high quality LPEE GaAs bulk ..:

Bryskiewicz, T. ; Bugajski, M. ; Lagowski, J..
Journal of Crystal Growth. 85 (1987) 1-2 - p. 136-141 , 1987

Link: https://doi.org/10.1016/..

12

Bulk GaAs crystal growth by liquid phase electroepitaxy:

Bryskiewicz, T. ; Boucher Jr., C.F. ; Lagowski, J..
Journal of Crystal Growth. 82 (1987) 3 - p. 279-288 , 1987

Link: https://doi.org/10.1016/..

13

Elimination of dislocations in bulk GaAs crystals grown by ..:

Boucher Jr., C. F. ; Ueda, O. ; Bryskiewicz, T...
Journal of Applied Physics. 61 (1987) 1 - p. 359-364 , 1987

Link: https://doi.org/10.1063/..

14

Liquid phase electroepitaxy of semiconductor compounds:

Bryskiewicz, T.
Progress in Crystal Growth and Characterization. 12 (1986) 1-4 - p. 29-43 , 1986

Link: https://doi.org/10.1016/..

15

New semi-insulating InP: Titanium midgap donors:

Brandt, C. D. ; Hennel, A. M. ; Pawlowicz, L. M....
Applied Physics Letters. 48 (1986) 17 - p. 1162-1164 , 1986

Link: https://doi.org/10.1063/..