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Bryskiewicz, T.
25
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1
Cellular structure in LEC ternary Ga1 − xInxAs crystals:
Reid, D.
;
Lent, B.
;
Bryskiewicz, T.
...
Journal of Crystal Growth. 174 (1997) 1-4 - p. 250-255 , 1997
Link:
https://doi.org/10.1016/..
?
2
In quest of unrestricted growth of bulk crystals by liquid ..:
Bryskiewicz, T.
Journal of Crystal Growth. 153 (1995) 1-2 - p. 19-24 , 1995
Link:
https://doi.org/10.1016/..
?
3
Internal strain and dislocations in Ga1−xAs crystals grown ..:
Bryskiewicz, B.
;
Bryskiewicz, T.
;
Jiran, E.
Journal of Electronic Materials. 24 (1995) 3 - p. 203-209 , 1995
Link:
https://doi.org/10.1007/..
?
4
Dislocation filtering in SiGe and InGaAs buffer layers grow..:
Bryskiewicz, T.
Applied Physics Letters. 66 (1995) 10 - p. 1237-1239 , 1995
Link:
https://doi.org/10.1063/..
?
5
Transmission electron microscopy characterization of InxGa1..:
McCaffrey, J. P.
;
Bryskiewicz, B.
;
Bryskiewicz, T.
.
Applied Physics Letters. 64 (1994) 18 - p. 2344-2346 , 1994
Link:
https://doi.org/10.1063/..
?
6
Growth of alloy substrates by liquid phase electroepitaxy; ..:
Bryskiewicz, T.
;
Laferrière, A.
Journal of Crystal Growth. 129 (1993) 3-4 - p. 429-442 , 1993
Link:
https://doi.org/10.1016/..
?
7
Properties of InGaAs epitaxial layers lattice matched to In..:
Roth, A.P.
;
Wasilewski, Z.
;
Sun, Q.
...
Journal of Crystal Growth. 113 (1991) 3-4 - p. 379-384 , 1991
Link:
https://doi.org/10.1016/..
?
8
Properties of very uniform InxGa1−xAs single crystals grown..:
Bryskiewicz, T.
;
Edelman, P.
;
Wasilewski, Z.
..
Journal of Applied Physics. 68 (1990) 6 - p. 3018-3020 , 1990
Link:
https://doi.org/10.1063/..
?
9
Erratum: ''Electronic and optical properties of Ti-doped Ga..:
Brandt, C. D.
;
Hennel, A. M.
;
Bryskiewicz, T.
...
Journal of Applied Physics. 66 (1989) 6 - p. 2768-2768 , 1989
Link:
https://doi.org/10.1063/..
?
10
Electronic and optical properties of Ti-doped GaAs and InP;..:
Brandt, C. D.
;
Hennel, A. M.
;
Bryskiewicz, T.
...
Journal of Applied Physics. 65 (1989) 9 - p. 3459-3469 , 1989
Link:
https://doi.org/10.1063/..
?
11
Growth and characterization of high quality LPEE GaAs bulk ..:
Bryskiewicz, T.
;
Bugajski, M.
;
Lagowski, J.
.
Journal of Crystal Growth. 85 (1987) 1-2 - p. 136-141 , 1987
Link:
https://doi.org/10.1016/..
?
12
Bulk GaAs crystal growth by liquid phase electroepitaxy:
Bryskiewicz, T.
;
Boucher Jr., C.F.
;
Lagowski, J.
.
Journal of Crystal Growth. 82 (1987) 3 - p. 279-288 , 1987
Link:
https://doi.org/10.1016/..
?
13
Elimination of dislocations in bulk GaAs crystals grown by ..:
Boucher Jr., C. F.
;
Ueda, O.
;
Bryskiewicz, T.
..
Journal of Applied Physics. 61 (1987) 1 - p. 359-364 , 1987
Link:
https://doi.org/10.1063/..
?
14
Liquid phase electroepitaxy of semiconductor compounds:
Bryskiewicz, T.
Progress in Crystal Growth and Characterization. 12 (1986) 1-4 - p. 29-43 , 1986
Link:
https://doi.org/10.1016/..
?
15
New semi-insulating InP: Titanium midgap donors:
Brandt, C. D.
;
Hennel, A. M.
;
Pawlowicz, L. M.
...
Applied Physics Letters. 48 (1986) 17 - p. 1162-1164 , 1986
Link:
https://doi.org/10.1063/..
1-15