E-LIB Suche - Ergebnisse für: Buffolo, M.

1

Review and Outlook on GaN and SiC Power Devices: Industrial..:

Buffolo, M. ; Favero, D. ; Marcuzzi, A....
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1344-1355 , 2024

Link: https://doi.org/10.1109/..

2

Impact of Mg-doping on the performance and degradation of A..:

Piva, F. ; Grigoletto, M. ; Brescancin, R....
Applied Physics Letters. 122 (2023) 15 - p. , 2023

Link: https://doi.org/10.1063/..

3

Addressing the electrical degradation of 845 nm micro-trans..:

, In: 2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD),

Zenari, M. ; Buffolo, M. ; De Santi, C.... - p. 91-92 , 2023

Link: https://doi.org/10.1109/..

4

Early failure of high-power white LEDs for outdoor applicat..:

Caria, A. ; Fraccaroli, R. ; Pierobon, G....
Microelectronics Reliability. 150 (2023) - p. 115142 , 2023

Link: https://doi.org/10.1016/..

5

Impact of high-temperature operating lifetime tests on the ..:

Pilati, M. ; Buffolo, M. ; Rampazzo, F....
Microelectronics Reliability. 150 (2023) - p. 115131 , 2023

Link: https://doi.org/10.1016/..

6

Bias-dependent degradation of single quantum well on InGaN-..:

Casu, C. ; Buffolo, M. ; Caria, A....
Microelectronics Reliability. 150 (2023) - p. 115132 , 2023

Link: https://doi.org/10.1016/..

7

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means ..:

Piva, F. ; Pilati, M. ; Buffolo, M....
Applied Physics Letters. 122 (2023) 18 - p. , 2023

Link: https://doi.org/10.1063/..

8

Comparison between Cu(In,Ga)Se2 solar cells with different ..:

Bertoncello, M. ; Barbato, M. ; Caria, A....
Microelectronics Reliability. 138 (2022) - p. 114612 , 2022

Link: https://doi.org/10.1016/..

9

Impact of a defect trapping layer on the reliability of 1.3..:

Zenari, M. ; Buffolo, M. ; De Santi, C....
Microelectronics Reliability. 138 (2022) - p. 114714 , 2022

Link: https://doi.org/10.1016/..

10

Laser-induced activation of Mg-doped GaN: quantitative char..:

Nardo, A ; de Santi, C ; Carraro, C...
Journal of Physics D: Applied Physics. 55 (2022) 18 - p. 185104 , 2022

Link: https://doi.org/10.1088/..

11

Capture and emission time map to investigate the positive V..:

Modolo, N. ; Fregolent, M. ; Masin, F....
Microelectronics Reliability. 138 (2022) - p. 114708 , 2022

Link: https://doi.org/10.1016/..

12

Effect of indium content and carrier distribution on the ef..:

Casu, C. ; Buffolo, M. ; Caria, A....
Microelectronics Reliability. 126 (2021) - p. 114377 , 2021

Link: https://doi.org/10.1016/..

13

Review on the degradation of GaN-based lateral power transi..:

De Santi, C. ; Buffolo, M. ; Rossetto, I....
e-Prime - Advances in Electrical Engineering, Electronics and Energy. 1 (2021) - p. 100018 , 2021

Link: https://doi.org/10.1016/..

14

Degradation mechanisms of 1.3 μm C-doped quantum dot lasers..:

Zenari, M. ; Buffolo, M. ; De Santi, C....
Microelectronics Reliability. 126 (2021) - p. 114222 , 2021

Link: https://doi.org/10.1016/..

15

Degradation mechanisms in high power InGaN semiconductor la..:

Piva, F. ; De Santi, C. ; Buffolo, M....
Microelectronics Reliability. 114 (2020) - p. 113786 , 2020

Link: https://doi.org/10.1016/..