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Bury, Erik
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1

An In-Depth Study of Ring Oscillator Reliability under Acce..:

Diaz-Fortuny, Javier ; Saraza-Canflanca, Pablo ; Bury, Erik..
Micromachines.  15 (2024)  6 - p. 769 , 2024
Link: https://doi.org/10.3390/..
 
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2

Demonstration of Chip Overclock Detection by Employing Tamp..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Diaz-Fortuny, Javier ; Saraza-Canflanca, Pablo ; Romano-Molar, Alex... - p. 4C.1-1-4C.1-7 , 2024
Link: https://doi.org/10.1109/..
 
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3

Improving the Tamper-Aware Odometer Concept by Enhancing Dy..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Diaz-Fortuny, Javier ; Sangani, Dishant ; Saraza-Canflanca, Pablo... - p. 1-9 , 2023
Link: https://doi.org/10.1109/..
 
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4

Investigating Nanowire, Nanosheet and Forksheet FET Hot-Car..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Vandemaele, Michiel ; Kaczer, Ben ; Bury, Erik... - p. 1-10 , 2023
Link: https://doi.org/10.1109/..
 
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5

Compact Physics Hot-Carrier Degradation Model Valid over a ..:

Tyaginov, Stanislav ; Bury, Erik ; Grill, Alexander...
Micromachines.  14 (2023)  11 - p. 2018 , 2023
Link: https://doi.org/10.3390/..
 
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6

Impact of channel thickness scaling on the performance of G..:

, In: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC),
Alian, Alireza ; Rodriguez, Raul ; Yadav, Sachin... - p. 384-387 , 2022
Link: https://doi.org/10.1109/..
 
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7

Modeling and Understanding the Compact Performance of h‐BN ..:

Lee, Kookjin ; Choi, Junhee ; Kaczer, Ben...
Advanced Functional Materials.  31 (2021)  23 - p. , 2021
Link: https://doi.org/10.1002/..
 
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8

Cyclic Thermal Effects on Devices of Two‐Dimensional Layere..:

Kim, Yeonsu ; Kaczer, Ben ; Verreck, Devin...
Advanced Electronic Materials.  7 (2021)  9 - p. 2100348 , 2021
Link: https://doi.org/10.1002/..
 
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9

The properties, effect and extraction of localized defect p..:

, In: 2021 IEEE International Reliability Physics Symposium (IRPS),
Vandemaele, Michiel ; Kaczer, Ben ; Tyaginov, Stanislav... - p. 1-7 , 2021
Link: https://doi.org/10.1109/..
 
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10

The Influence of Gate Bias on the Anneal of Hot-Carrier Deg..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Vandemaele, Michiel ; Chuang, Kai-Hsin ; Bury, Erik... - p. 1-7 , 2020
Link: https://doi.org/10.1109/..
 
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11

Correlated Time-0 and Hot-Carrier Stress Induced FinFET Par..:

Makarov, Alexander ; Roussel, Philippe ; Bury, Erik...
Micromachines.  11 (2020)  7 - p. 657 , 2020
Link: https://doi.org/10.3390/..
 
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12

Relevance of fin dimensions and high-pressure anneals on ho..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Chasin, Adrian ; Franco, Jacopo ; Bury, Erik... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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13

On Correlation between Hot-Carrier Stress Induced Device Pa..:

, In: 2019 IEEE International Integrated Reliability Workshop (IIRW),
Makarov, Alexander ; Roussel, Philippe ; Bury, Erik... - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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14

Reliability in Stacked Gate-All-Around Si Nanowire Devices:..:

, In: 2019 IEEE International Integrated Reliability Workshop (IIRW),
Chasin, Adrian ; Horiguchi, Naoto ; Linten, Dimitri... - p. 1-8 , 2019
Link: https://doi.org/10.1109/..
 
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15

Functional analysis of EID1, an F‐box protein involved in p..:

Marrocco, Katia ; Zhou, Yongchun ; Bury, Erik...
The Plant Journal.  45 (2006)  3 - p. 423-438 , 2006
Link: https://doi.org/10.1111/..
 
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