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Byun, Young-Chul
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1

High growth rate and high wet etch resistance silicon nitri..:

Kim, Harrison Sejoon ; Hwang, Su Min ; Meng, Xin...
Journal of Materials Chemistry C.  8 (2020)  37 - p. 13033-13039 , 2020
Link: https://doi.org/10.1039/..
 
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2

Top-down fabrication of high-uniformity nanodiamonds by sel..:

Zheng, Jiabao ; Lienhard, Benjamin ; Doerk, Gregory...
Scientific Reports.  9 (2019)  1 - p. , 2019
Link: https://doi.org/10.1038/..
 
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3

Improved interface characteristics of Mo/SiO2/4H-SiC metal-..:

Lee, Jae-Gil ; Kim, Dong-Hwan ; Eom, Su-Keun...
Journal of the Korean Physical Society.  72 (2018)  1 - p. 166-170 , 2018
Link: https://doi.org/10.3938/..
 
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4

Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of S..:

Meng, Xin ; Kim, Harrison Sejoon ; Lucero, Antonio T....
ACS Applied Materials & Interfaces.  10 (2018)  16 - p. 14116-14123 , 2018
Link: https://doi.org/10.1021/..
 
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5

Investigation of the Physical Properties of Plasma Enhanced..:

Kim, Harrison Sejoon ; Meng, Xin ; Kim, Si Joon...
ACS Applied Materials & Interfaces.  10 (2018)  51 - p. 44825-44833 , 2018
Link: https://doi.org/10.1021/..
 
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6

Comparative study of trimethylaluminum and tetrakis(dimethy..:

An, Youngseo ; Lee, Changmin ; Choi, Sungho...
Journal of Physics D: Applied Physics.  50 (2017)  41 - p. 415103 , 2017
Link: https://doi.org/10.1088/..
 
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7

Impurity and silicate formation dependence on O3 pulse time..:

Park, Tae Joo ; Byun, Young-Chul ; Wallace, Robert M..
The Journal of Chemical Physics.  146 (2017)  5 - p. , 2017
Link: https://doi.org/10.1063/..
 
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8

Low temperature (100 °C) atomic layer deposited-ZrO2 for re..:

Byun, Young-Chul ; Lee, Jae-Gil ; Meng, Xin...
Applied Physics Letters.  111 (2017)  8 - p. , 2017
Link: https://doi.org/10.1063/..
 
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9

Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN ca..:

Kim, Si Joon ; Narayan, Dushyant ; Lee, Jae-Gil...
Applied Physics Letters.  111 (2017)  24 - p. , 2017
Link: https://doi.org/10.1063/..
 
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10

Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53G..:

Choi, Sungho ; An, Youngseo ; Lee, Changmin...
Scientific Reports.  7 (2017)  1 - p. , 2017
Link: https://doi.org/10.1038/..
 
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11

Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor ..:

Roh, Seung-Hyun ; Eom, Su-Keun ; Choi, Gwang-Ho...
Journal of the Korean Physical Society.  71 (2017)  4 - p. 185-190 , 2017
Link: https://doi.org/10.3938/..
 
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12

Atomic Layer Deposition of Silicon Nitride Thin Films: A Re..:

Meng, Xin ; Byun, Young-Chul ; Kim, Harrison...
Materials.  9 (2016)  12 - p. 1007 , 2016
Link: https://doi.org/10.3390/..
 
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13

Electrical properties of the HfO2–Al2O3 nanolaminates with ..:

Mahata, Chandreswar ; An, Youngseo ; Choi, Sungho...
Current Applied Physics.  16 (2016)  3 - p. 294-299 , 2016
Link: https://doi.org/10.1016/..
 
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14

Formation of a ZnO/ZnS interface passivation layer on (NH4)..:

Lucero, Antonio T. ; Byun, Young-Chul ; Qin, Xiaoye...
Japanese Journal of Applied Physics.  55 (2016)  8S2 - p. 08PC02 , 2016
Link: https://doi.org/10.7567/..
 
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15

High-voltage AlGaN/GaN Schottky barrier diodes on silicon u..:

Seok, Ogyun ; Han, Min-Koo ; Byun, Young-Chul...
Solid-State Electronics.  103 (2015)  - p. 49-53 , 2015
Link: https://doi.org/10.1016/..
 
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