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Cai, Puyang
24  results:
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1

Effects of Oxygen Vacancy on Ferroelectric Tunnel Junctions..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Ji, Ning ; Feng, Ning ; Qiu, Jiajun... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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2

New Insights into the Memory Window Estimation in FeFET fro..:

, In: 2023 Silicon Nanoelectronics Workshop (SNW),
Cai, Puyang ; Li, Hao ; Su, Chang... - p. 123-124 , 2023
Link: https://doi.org/10.23919..
 
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3

New Insights into Read Current Margin and Memory Window of ..:

, In: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC),
Su, Chang ; Liang, Zhongxin ; Fu, Zhiyuan... - p. 89-92 , 2023
Link: https://doi.org/10.1109/..
 
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4

A Compact Model of FTJ Covering the Trapping/De-trapping Ch..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Feng, Ning ; Ji, Ning ; Zhang, Fangxing... - p. 121-124 , 2023
Link: https://doi.org/10.23919..
 
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5

Catching the Missing EM Consequence in Soft Breakdown Relia..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Dong, Zuoyuan ; Sun, Zixuan ; Yang, Xin... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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6

Characterization of Field Cycling Fatigue in HfZrOx Ferroel..:

, In: 2023 China Semiconductor Technology International Conference (CSTIC),
Cai, Puyang ; Liu, Zhiwei ; Zhu, Tianxiang... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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7

Towards the understanding of ferroelectric-intrinsic variab..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Wu, Yishan ; Cai, Puyang ; Liu, Zhiwei.. - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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8

Comprehensive Study of NBTI and Off-State Reliabilty in Sub..:

, In: 2023 International Electron Devices Meeting (IEDM),
Sun, Zixuan ; Cai, Puyang ; Song, Jiahao... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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9

Metal–Ferroelectric–Semiconductor Tunnel Junction: Essentia..:

Feng, Ning ; Li, Hao ; Peng, Baokang...
IEEE Transactions on Electron Devices.  70 (2023)  6 - p. 3382-3389 , 2023
Link: https://doi.org/10.1109/..
 
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10

A Physics-Based Dynamic Compact Model of Ferroelectric Tunn..:

Feng, Ning ; Li, Hao ; Zhang, Lining...
IEEE Electron Device Letters.  44 (2023)  2 - p. 261-264 , 2023
Link: https://doi.org/10.1109/..
 
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11

Deep Understanding of Reliability in Hf-based FeFET during ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Cai, Puyang ; Zhu, Tianxiang ; Duan, Jiahui... - p. 32.2.1-32.2.4 , 2022
Link: https://doi.org/10.1109/..
 
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12

Investigation of Time Dependent Dielectric Breakdown (TDDB)..:

Liu, Zhiwei ; Cai, Puyang ; Yu, Songhai...
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 735-740 , 2021
Link: https://doi.org/10.1109/..
 
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13

Recent progress in devices and circuits based on wafer-scal..:

Tang, Hongwei ; Zhang, Haima ; Chen, Xinyu...
Science China Information Sciences.  62 (2019)  12 - p. , 2019
Link: https://doi.org/10.1007/..
 
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14

Investigation of Time Dependent Dielectric Breakdown (TDDB)..:

Zhiwei Liu ; Puyang Cai ; Songhai Yu...
https://ieeexplore.ieee.org/document/9509278/.  , 2021
Link: https://doi.org/10.1109/..
 
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15

Lightweight and Strong Cellulosic Triboelectric Materials E..:

Li, Xiuzhen ; Wang, Jinlong ; Liu, Yanhua...
Nano Letters.  24 (2024)  10 - p. 3273-3281 , 2024
Link: https://doi.org/10.1021/..
 
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