Cantudo, Antonio
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2

Influence of stop and gate voltage on resistive switching o..:

Maldonado, David ; Cantudo, Antonio ; Swamy Reddy, Keerthi Dorai...
Materials Science in Semiconductor Processing.  182 (2024)  - p. 108726 , 2024
 
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A Comparison of Resistive Switching Parameters for Memristi..:

, In: 2023 14th Spanish Conference on Electron Devices (CDE),
 
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An Analysis on the Architecture and the Size of Quantized H..:

Romero Zaliz, Rocio Celeste ; Cantudo, Antonio ; Jiménez Molinos, Francisco.
Romero-Zaliz, R. [et al.]. An Analysis on the Architecture and the Size of Quantized Hardware Neural Networks Based on Memristors. Electronics 2021, 10, 3141. [https://doi.org/10.3390/electronics10243141].  , 2021
 
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A thorough investigation of the switching dynamics of TiN/T..:

Maldonado Correa, David ; Aldana Delgado, Samuel ; Cantudo Gómez, Antonio..
D. Maldonado et al. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories. Materials Science in Semiconductor Processing 169 (2024) 107878[https://doi.org/10.1016/j.mssp.2023.107878].  , 2023
 
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TiN/Ti/HfO2/TiN memristive devices for neuromorphic computi..:

David Maldonado ; Antonio Cantudo ; Eduardo Perez...
https://www.frontiersin.org/articles/10.3389/fnins.2023.1271956/full.  , 2023
 
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3D simulation of conductive nanofilaments in multilayer h-B..:

Maldonado Correa, David ; Cantudo Gómez, Antonio ; Gómez Campos, Francisco Manuel.
Download Citation Mater. Horiz., 2024, Accepted Manuscript [https://doi.org/10.1039/D3MH01834B].  , 2023
 
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15

TiN/Ti/HfO2/TiN memristive devices for neuromorphic computi..:

Maldonado Correa, David ; Cantudo Gómez, Antonio ; Romero Zaliz, Rocio Celeste..
Maldonado D, Cantudo A, Perez E, Romero-Zaliz R, Perez-Bosch Quesada E, Mahadevaiah MK, Jimenez-Molinos F, Wenger C and Roldan JB (2023) TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance. Front. Neurosci. 17:1271956. [doi:10.3389/fnins.2023.1271956].  , 2023
 
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