E-LIB Suche - Ergebnisse für: Casbon, Michael A

1

Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-o..:

Yang, Feiyuan ; Singh, Manikant ; Uren, Michael J....
IEEE Transactions on Electron Devices. 69 (2022) 2 - p. 525-530 , 2022

Link: https://doi.org/10.1109/..

2

Evaluation of admittance domain behavioural model complexit..:

Moure, Maria Rocio ; Casbon, Michael ; Ladero, Nicolas..
IET Microwaves, Antennas & Propagation. 16 (2022) 12 - p. 780-788 , 2022

Link: https://doi.org/10.1049/..

3

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown ..:

Ghosh, Saptarsi ; Hinz, Alexander ; Fairclough, Simon M....
ACS Applied Electronic Materials. 3 (2021) 2 - p. 813-824 , 2021

Link: https://doi.org/10.1021/..

4

Optimising Linearity of Envelope Tracking Power Amplifier U..:

, In: 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC),

Chen, Peng ; Alt, Alexander ; Moreno Rubio, Jorge J.... - p. 1-3 , 2020

Link: https://doi.org/10.1109/..

5

Source/Load-Pull Characterisation of GaN on Si HEMTs with D..:

, In: 2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR),

Quaglia, Roberto ; Piacibello, Anna ; Costanzo, Ferdinando... - p. 5-8 , 2020

Link: https://doi.org/10.1109/..

6

Buffer-Induced Current Collapse in GaN HEMTs on Highly Resi..:

Chandrasekar, Hareesh ; Uren, Michael J. ; Eblabla, Abdalla...
IEEE Electron Device Letters. 39 (2018) 10 - p. 1556-1559 , 2018

Link: https://doi.org/10.1109/..

7

Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MO..:

Singh, Manikant ; Casbon, Michael A. ; Uren, Michael J....
IEEE Electron Device Letters. 39 (2018) 10 - p. 1572-1575 , 2018

Link: https://doi.org/10.1109/..

8

Evaluation of Pulsed I–V Analysis as Validation Tool of Non..:

Hirshy, Hassan ; Singh, Manikant ; Casbon, Michael A....
IEEE Transactions on Electron Devices. 65 (2018) 12 - p. 5307-5313 , 2018

Link: https://doi.org/10.1109/..

9

Hot-Electron Electroluminescence Under RF Operation in GaN-..:

Brazzini, Tommaso ; Casbon, Michael A. ; Uren, Michael J....
IEEE Transactions on Electron Devices. 64 (2017) 5 - p. 2155-2160 , 2017

Link: https://doi.org/10.1109/..

10

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B ..:

Brazzini, Tommaso ; Casbon, Michael A. ; Sun, Huarui...
Microelectronics Reliability. 55 (2015) 12 - p. 2493-2498 , 2015

Link: https://doi.org/10.1016/..

11

Electroluminescence of hot electrons in AlGaN/GaN high-elec..:

Brazzini, Tommaso ; Casbon, Michael A. ; Sun, Huarui...
Applied Physics Letters. 106 (2015) 21 - p. , 2015

Link: https://doi.org/10.1063/..

12

Evaluation of admittance domain behavioural model complexit..:

Moure Fernández, María del Rocío ; Casbon, Michael ; Ladero Canle, Nicolás..
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/TEC2017‐88242‐C3‐2‐R/ES/SISTEMA AUTONOMO AIRE/TIERRA DE BAJA ALTURA PARA GEOLOCALIZACION DE INCENDIOS FORESTALES. MODELADO ELECTRO-TERMICO Y DISEÑO DE AMPLIFICADORES DE POTENCIA EFICIENTES. , 2022

Link: http://hdl.handle.net/11..

13

Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-o..:

Yang, F ; Singh, Manikant ; Uren, Michael J...
Yang , F , Singh , M , Uren , M J , Martin , T , Hirshy , H , Casbon , M A , Tasker , P J & Kuball , M H H 2022 , ' Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs ' , IEEE Transactions on Electron Devices , vol. 69 , no. 2 , pp. 525-530 . https://doi.org/10.1109/TED.2021.3138841. , 2022

Link: https://hdl.handle.net/1..

14

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown ..:

Ghosh, Saptarsi ; Hinz, Alexander ; Fairclough, Simon M...
https://www.repository.cam.ac.uk/handle/1810/316471. , 2021

Link: https://www.repository.c..

15

Source/Load-Pull Characterisation of GaN on Si HEMTs with D..:

Quaglia, Roberto ; Piacibello, Anna ; Costanzo, Ferdinando...
info:eu-repo/semantics/altIdentifier/isbn/978-1-7281-3358-4. , 2020

Link: http://hdl.handle.net/11..