E-LIB Suche - Ergebnisse für: Cha, Ho-Young

1

Normally-off recessed gate β-Ga2O3 MOSHFETs with a modulati..:

Atmaca, Gökhan ; Cha, Ho-Young
Physica Scripta. 99 (2024) 3 - p. 035901 , 2024

Link: https://doi.org/10.1088/..

2

P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transis..:

Kim, Dong-Guk ; Yim, Jun-Hyeok ; Lee, Min-Keun...
IEEE Electron Device Letters. 45 (2024) 6 - p. 972-975 , 2024

Link: https://doi.org/10.1109/..

3

Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivatio..:

Yang, Yeo-Reum ; Yim, Jun-Hyeok ; Kim, Hyun-Seop.
Materials Science in Semiconductor Processing. 179 (2024) - p. 108483 , 2024

Link: https://doi.org/10.1016/..

4

Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEAL..:

Jang, Won-Ho ; Yim, Jun-Hyeok ; Kim, Hyungtak.
Electronics. 12 (2023) 7 - p. 1667 , 2023

Link: https://doi.org/10.3390/..

5

Design of Trench MIS Field Plate Structure for Edge Termina..:

Lee, Sung-Hoon ; Cha, Ho-Young
Micromachines. 14 (2023) 11 - p. 2005 , 2023

Link: https://doi.org/10.3390/..

6

Fluorine-Based Low-Damage Selective Etching Process for E-M..:

Kim, Hyeon-Ji ; Yim, Jun-Hyeok ; Kim, Hyungtak.
Electronics. 12 (2023) 20 - p. 4347 , 2023

Link: https://doi.org/10.3390/..

7

High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/..:

Nguyen, Van Cuong ; Cha, Ho-Young ; Kim, Hyungtak
Sensors. 23 (2023) 7 - p. 3465 , 2023

Link: https://doi.org/10.3390/..

8

On/off-state noise characteristics in AlGaN/GaN HFET with A..:

Im, Ki-Sik ; Choi, Uiho ; Kim, Minho...
Applied Physics Letters. 120 (2022) 1 - p. , 2022

Link: https://doi.org/10.1063/..

9

Temperature- and Frequency-Dependent Ferroelectric Characte..:

Jang, Chan-Hee ; Kim, Hyun-Seop ; Kim, Hyungtak.
Materials. 15 (2022) 6 - p. 2097 , 2022

Link: https://doi.org/10.3390/..

10

Improved Response Characteristics of GaN-Based Hydrogen Sen..:

Choi, Won-Tae ; Park, Tae-Hyun ; Hur, Jae-Hyun..
The Journal of Korean Institute of Electromagnetic Engineering andScience. 33 (2022) 2 - p. 92-97 , 2022

Link: https://doi.org/10.5515/..

11

Normally-off β-Ga2O3 MOSFET with an Epitaxial Drift Layer:

Jang, Chan-Hee ; Atmaca, Gökhan ; Cha, Ho-Young
Micromachines. 13 (2022) 8 - p. 1185 , 2022

Link: https://doi.org/10.3390/..

12

Low-Frequency Noise Characteristics in HfO2-Based Metal-Fer..:

Im, Ki-Sik ; Shin, Seungheon ; Jang, Chan-Hee.
Materials. 15 (2022) 21 - p. 7475 , 2022

Link: https://doi.org/10.3390/..

13

β‐(Al0.17Ga0.83)2O3/Ga2O3 Delta‐Doped Heterostructure MODFE..:

Atmaca, Gökhan ; Cha, Ho-Young
physica status solidi (a). 219 (2022) 12 - p. , 2022

Link: https://doi.org/10.1002/..

14

Delta‐Doped β‐(Al0.17Ga0.83)2O3/Ga2O3 Double‐Channel Hetero..:

Atmaca, Gökhan ; Cha, Ho-Young
physica status solidi (a). 219 (2022) 20 - p. , 2022

Link: https://doi.org/10.1002/..

15

Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gat..:

Cho, Seong-In ; Jang, Won-Ho ; Cha, Ho-Young.
Journal of Electromagnetic Engineering and Science. 22 (2022) 3 - p. 291-295 , 2022

Link: https://doi.org/10.26866..