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Chakravorty, Anusmita
23  results:
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1

Physics-based 3D simulation of single event transient curre..:

Song, Jianan ; Chakravorty, Anusmita ; Jin, Miaomiao.
Applied Physics Letters.  124 (2024)  17 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

Synchrotron-based x-ray diffraction analysis of energetic i..:

Chakravorty, Anusmita ; Boulle, Alexandre ; Debelle, Aurélien...
Journal of Applied Physics.  136 (2024)  3 - p. , 2024
Link: https://doi.org/10.1063/..
 
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3

Investigating the thermal stability of ultra-small Ag, Au a..:

Jatav, Hemant ; Mičetic, Maja ; Chakravorty, Anusmita...
Nanoscale.  15 (2023)  28 - p. 12025-12037 , 2023
Link: https://doi.org/10.1039/..
 
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4

Localized thermal spike driven morphology and electronic st..:

Dey, Sutapa ; Chakravorty, Anusmita ; Mishra, Shashi Bhusan...
Nanoscale Advances.  4 (2022)  1 - p. 241-249 , 2022
Link: https://doi.org/10.1039/..
 
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5

Luminescence from color centres induced by oxidation and io..:

Chakravorty, Anusmita ; Kabiraj, D.
Journal of Luminescence.  244 (2022)  - p. 118713 , 2022
Link: https://doi.org/10.1016/..
 
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6

100 Mev Ag and 25 Kev He Induced Defects in 4H-SiC:

Chakravorty, Anusmita ; Kabiraj, Debdulal
ECS Transactions.  107 (2022)  1 - p. 439-444 , 2022
Link: https://doi.org/10.1149/..
 
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7

A Combinatorial Study Investigating the Growth of Ultrasmal..:

Jatav, Hemant ; Shabaninezhad, Masoud ; Mičetić, Maja...
Langmuir.  38 (2022)  39 - p. 11983-11993 , 2022
Link: https://doi.org/10.1021/..
 
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8

Monitoring of the recovery of ion-damaged 4H-SiC with in si..:

Chakravorty, Anusmita ; Boulle, Alexandre ; Debelle, Aurélien...
Journal of Materials Science.  57 (2022)  43 - p. 20309-20319 , 2022
Link: https://doi.org/10.1007/..
 
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9

3D Thermal Spike Simulation: Swift Heavy Ion Irradiation of..:

, In: Tailored Functional Materials; Springer Proceedings in Materials,
Chakravorty, Anusmita ; Dufour, Ch ; Kabiraj, Debdulal - p. 25-30 , 2022
Link: https://doi.org/10.1007/..
 
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10

GaAs a model system to study the role of electron–phonon co..:

Chakravorty, Anusmita ; Dufour, Ch ; Mishra, Ambuj..
Journal of Physics D: Applied Physics.  55 (2022)  50 - p. 505301 , 2022
Link: https://doi.org/10.1088/..
 
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11

Role of Fermi-level depinning in quenching of V4+ related p..:

Chakravorty, Anusmita ; Kabiraj, Debdulal
Semiconductor Science and Technology.  37 (2022)  9 - p. 095024 , 2022
Link: https://doi.org/10.1088/..
 
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12

300 keV Ar ion induced effects in GaAs and 4H-SiC:

Chakravorty, Anusmita ; Jatav, Hemant ; Singh, Budhi..
Materials Today: Proceedings.  47 (2021)  - p. 1633-1636 , 2021
Link: https://doi.org/10.1016/..
 
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13

Controlled generation of photoemissive defects in 4H-SiC us..:

Chakravorty, Anusmita ; Singh, Budhi ; Jatav, Hemant...
Journal of Applied Physics.  129 (2021)  24 - p. , 2021
Link: https://doi.org/10.1063/..
 
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14

Recovery of ion-damaged 4H-SiC under thermal and ion beam-i..:

Chakravorty, Anusmita ; Dufour, Ch ; Singh, Budhi...
Journal of Applied Physics.  130 (2021)  16 - p. , 2021
Link: https://doi.org/10.1063/..
 
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15

Intense ionizing irradiation-induced atomic movement toward..:

Chakravorty, Anusmita ; Singh, Budhi ; Jatav, Hemant...
Journal of Applied Physics.  128 (2020)  16 - p. , 2020
Link: https://doi.org/10.1063/..
 
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