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Chalkov, V. Yu.
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1

Development of a Ge-MISFET Instrument Structure with an Ind..:

Alyabina, N. A. ; Arkhipova, E. A. ; Buzynin, Yu. N....
Russian Microelectronics.  53 (2024)  3 - p. 197-201 , 2024
Link: https://doi.org/10.1134/..
 
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2

Epitaxial n+-Ge/p+-Si(0 0 1) heterostructures with ultra sh..:

Titova, A.M. ; Shengurov, V.G. ; Filatov, D.O....
Materials Science and Engineering: B.  289 (2023)  - p. 116219 , 2023
Link: https://doi.org/10.1016/..
 
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3

Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI..:

Sushkov, A. A. ; Pavlov, D. A. ; Andrianov, A. I....
Semiconductors.  56 (2022)  2 - p. 122-133 , 2022
Link: https://doi.org/10.1134/..
 
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4

Growth defects in GeSn/Ge/Si(001) epitaxial layers grown by..:

Shengurov, V.G. ; Chalkov, V.Yu. ; Denisov, S.A....
Journal of Crystal Growth.  578 (2022)  - p. 126421 , 2022
Link: https://doi.org/10.1016/..
 
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5

Demonstration of the Effect of Resistive Switching of Indiv..:

Vorontsov, V. A. ; Antonov, D. A. ; Kruglov, A. V....
Technical Physics Letters.  47 (2021)  11 - p. 781-784 , 2021
Link: https://doi.org/10.1134/..
 
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6

Investigation of resistive switching in Ag/Ge/Si(001) stack..:

Vorontsov, V A ; Antonov, D A ; Kruglov, A V...
Journal of Physics: Conference Series.  2086 (2021)  1 - p. 012043 , 2021
Link: https://doi.org/10.1088/..
 
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7

Structure and surface morphology of GeSn/Si(001) layers gro..:

Zaitsev, A V ; Kuz'min, M Yu ; Denisov, S A...
Journal of Physics: Conference Series.  1482 (2020)  1 - p. 012016 , 2020
Link: https://doi.org/10.1088/..
 
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8

Gallium-doped germanium epitaxial layers grown on silicon s..:

Shengurov, V.G. ; Denisov, S.A. ; Yu. Chalkov, V....
Materials Science and Engineering: B.  259 (2020)  - p. 114579 , 2020
Link: https://doi.org/10.1016/..
 
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9

Resistive Switching in Memristors Based on Ge/Si(001) Epita..:

Filatov, D. O. ; Shenina, M. E. ; Shengurov, V. G....
Semiconductors.  54 (2020)  14 - p. 1833-1835 , 2020
Link: https://doi.org/10.1134/..
 
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10

On the Influence of Pulsed Gamma-Neutron Irradiation on the..:

Ivanova, M. M. ; Filatov, D. O. ; Nezhdanov, A. V....
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.  14 (2020)  1 - p. 169-175 , 2020
Link: https://doi.org/10.1134/..
 
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11

Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the ..:

Sushkov, A. A. ; Pavlov, D. A. ; Denisov, S. A....
Semiconductors.  54 (2020)  10 - p. 1332-1335 , 2020
Link: https://doi.org/10.1134/..
 
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12

Resistive Switching in Memristors Based on Ag/Ge/Si Heteros..:

Gorshkov, O. N. ; Shengurov, V. G. ; Denisov, S. A....
Technical Physics Letters.  46 (2020)  1 - p. 91-93 , 2020
Link: https://doi.org/10.1134/..
 
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13

Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structure..:

Shengurov, V. G. ; Filatov, D. O. ; Denisov, S. A....
Semiconductors.  53 (2019)  9 - p. 1238-1241 , 2019
Link: https://doi.org/10.1134/..
 
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14

Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) La..:

Prokhorov, D. S. ; Shengurov, V. G. ; Denisov, S. A....
Semiconductors.  53 (2019)  9 - p. 1262-1265 , 2019
Link: https://doi.org/10.1134/..
 
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15

Studies of the Cross Section and Photoluminescence of a GaA..:

Sushkov, A. A. ; Pavlov, D. A. ; Shengurov, V. G....
Semiconductors.  53 (2019)  9 - p. 1242-1245 , 2019
Link: https://doi.org/10.1134/..
 
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